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SISS27DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 50A PPAK 1212-8S
17900 Pcs New Original In Stock
P-Channel 30 V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
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5.0 / 5.0
- (86 Ratings)
SISS27DN-T1-GE3
Product Overview
13009806
DiGi Electronics Part Number
SISS27DN-T1-GE3-DGManufacturer
Vishay Siliconix
SISS27DN-T1-GE3
Description
MOSFET P-CH 30V 50A PPAK 1212-8SInventory
17900 Pcs New Original In Stock
P-Channel 30 V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
How to Order
Shipping & Delivery
Quality Assurance & Returns
365 - Day Quality Guarantee - Every part fully backed.
90 - Day Refund or Exchange - Defective parts? No hassle.
Limited Stock, Order Now - Get reliable parts without worry.
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Worldwide Delivery in 3-5 Business Days
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SISS27DN-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Cut Tape (CT) & Digi-Reel®
Series
TrenchFET®
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5250 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Base Product Number
SISS27
Datasheet & Documents
HTML Datasheet
SISS27DN-T1-GE3-DG
Reviews
5.0/5.0-(Show up to 5 Ratings)
грудня 02, 2025
Their customer service team is proactive and always ready to assist.
грудня 02, 2025
Their stock levels are impressive, which allows us to rely on quick delivery times for our projects.
грудня 02, 2025
The quality of DiGi Electronics products is outstanding, providing reliable performance every single time.
грудня 02, 2025
DiGi Electronics offers exceptional after-sales support, ensuring customer satisfaction every step of the way.
грудня 02, 2025
Each delivery arrives on time and in perfect condition.
грудня 02, 2025
Their transparent pricing structure is one of the reasons I trust them.
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Frequently Asked Questions (FAQ)
What are the main features and specifications of the Vishay P-Channel MOSFET SISS27DN-T1-GE3?
This P-Channel MOSFET supports a drain-to-source voltage of 30V, continuous drain current up to 50A, and features a PowerPAK® 1212-8S surface-mount package, making it suitable for high-current power applications. It has a low Rds(on) of 5.6mΩ at 15A and 10V, and operates within a temperature range of -50°C to 150°C.
Is the Vishay SISS27DN-T1-GE3 compatible with standard surface-mount PCB designs?
Yes, the SISS27DN-T1-GE3 comes in a PowerPAK® 1212-8S package, which is designed for surface mounting, ensuring compatibility with typical PCB assembly processes for efficient integration into your power circuits.
What applications are suitable for this P-Channel MOSFET from Vishay's TrenchFET® series?
This MOSFET is ideal for power switching, load switching, motor control, and other high-current, high-frequency applications that require reliable and efficient P-Channel FETs with low Rds(on).
How does the Vishay SISS27DN-T1-GE3 perform in terms of power dissipation and thermal management?
It has a maximum power dissipation of 4.8W at ambient temperature and up to 57W when cooled to the case, with excellent thermal performance suitable for demanding power electronics designs, provided proper heat sinking is used.
What is the availability and warranty status of the Vishay SISS27DN-T1-GE3 MOSFET?
The SISS27DN-T1-GE3 is actively stocked with over 7,200 units available as new and original. For specific warranty and support details, please contact the supplier or distributor to ensure product authenticity and after-sales service.
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