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SISS65DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 25.9A/94A PPAK
6100 Pcs New Original In Stock
P-Channel 30 V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
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(Ships tomorrow)
*Quantity
Minimum 1
Minimum 1
5.0 / 5.0
- (280 Ratings)
SISS65DN-T1-GE3
Product Overview
12786336
DiGi Electronics Part Number
SISS65DN-T1-GE3-DGManufacturer
Vishay Siliconix
SISS65DN-T1-GE3
Description
MOSFET P-CH 30V 25.9A/94A PPAKInventory
6100 Pcs New Original In Stock
P-Channel 30 V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
How to Order
Shipping & Delivery
Quality Assurance
365 - Day Quality Guarantee - Every part fully backed.
90 - Day Refund or Exchange - Defective parts? No hassle.
Limited Stock, Order Now - Get reliable parts without worry.
Global Shipping & Secure Packaging
Worldwide Delivery in 3-5 Business Days
100% ESD Anti-Static Packaging
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SISS65DN-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen III
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25.9A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
138 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4930 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
5.1W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Base Product Number
SISS65
Datasheet & Documents
HTML Datasheet
SISS65DN-T1-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SISS65DN-T1-GE3DKR
SISS65DN-T1-GE3CT
SISS65DN-T1-GE3TR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
грудня 02, 2025
제품이 포장된 상태가 훌륭했고, 서비스도 매우 만족스러웠습니다.
грудня 02, 2025
The responsiveness of their after-sales team is truly impressive.
грудня 02, 2025
The quality of their materials is evident from the moment you handle their products.
грудня 02, 2025
I always receive timely updates about my orders.
грудня 02, 2025
Their affordable pricing has made tech shopping much easier for me.
грудня 02, 2025
We appreciate DiGi Electronics' reliable delivery times, which help us maintain efficient repair workflows.
грудня 02, 2025
DiGi Electronics offers trustworthy support that helps us build long-term customer trust.
грудня 02, 2025
I appreciate the careful packaging; it shows they prioritize product safety and customer experience.
грудня 02, 2025
The product's construction feels solid, promising a long lifespan of reliable use.
грудня 02, 2025
The staff's professionalism and knowledge make every interaction pleasant and efficient.
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Frequently Asked Questions (FAQ)
What are the key features of the Vishay P-Channel MOSFET SISS65DN-T1-GE3?
This PowerPAK® 1212-8S MOSFET operates at 30V and 25.9A (Ta) with a low Rds On of 4.6mOhm, providing efficient power switching in surface mount applications. It is suitable for high-current, high-speed switching with excellent thermal performance.
Is the Vishay SISS65DN-T1-GE3 MOSFET compatible with various electronic devices?
Yes, this P-Channel MOSFET is widely used in power management, load switching, and motor control in various electronic devices due to its versatile voltage and current ratings. Its surface mount design ensures easy integration into different circuit layouts.
What are the advantages of using the PowerPAK® 1212-8S package for this MOSFET?
The PowerPAK® 1212-8S package offers a compact, thermally efficient design that helps dissipate heat effectively, supporting higher power dissipation (up to 65.8W Tc) and reliable performance in demanding applications.
Can I purchase the Vishay SISS65DN-T1-GE3 MOSFET in large quantities?
Yes, the product is available in inventory with 3996 units in stock, making it suitable for bulk orders or large-scale production needs. It is a new, original, and RoHS-compliant component.
What is the recommended operating temperature range for this MOSFET?
This MOSFET can operate reliably within a temperature range of -55°C to 150°C (TJ), ensuring its suitability for a wide range of industrial and electronic applications.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SISS65DN-T1-GE3 CAD Models
Vishay Siliconix SISS65DN-T1-GE3 PCB symbols & footprints
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