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SISA72ADN-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 25.4A/94A PPAK
6400 Pcs New Original In Stock
N-Channel 40 V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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5.0 / 5.0
- (367 Ratings)
SISA72ADN-T1-GE3
Product Overview
12786626
DiGi Electronics Part Number
SISA72ADN-T1-GE3-DGManufacturer
Vishay Siliconix
SISA72ADN-T1-GE3
Description
MOSFET N-CH 40V 25.4A/94A PPAKInventory
6400 Pcs New Original In Stock
N-Channel 40 V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
How to Order
Shipping & Delivery
Quality Assurance
365 - Day Quality Guarantee - Every part fully backed.
90 - Day Refund or Exchange - Defective parts? No hassle.
Limited Stock, Order Now - Get reliable parts without worry.
Global Shipping & Secure Packaging
Worldwide Delivery in 3-5 Business Days
100% ESD Anti-Static Packaging
Real-Time Tracking for Every Order
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SISA72ADN-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
25.4A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
2530 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SISA72
Datasheet & Documents
HTML Datasheet
SISA72ADN-T1-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SISA72ADN-T1-GE3TR
SISA72ADN-T1-GE3DKR
SISA72ADN-T1-GE3CT
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
грудня 02, 2025
Ils livrent toujours à l’heure et la qualité est toujours au rendez-vous.
грудня 02, 2025
DiGi Electronicsのパッケージはいつも丁寧で高品質なので安心して受け取れます。
грудня 02, 2025
The helpful staff at DiGi Electronics walked me through the tracking features, making it easy to monitor my delivery.
грудня 02, 2025
Their after-sales support team is very knowledgeable and always ready to help resolve any issues quickly and efficiently.
грудня 02, 2025
Their security-focused packaging design is a clear indicator of quality assurance.
грудня 02, 2025
They handle post-purchase support very professionally and efficiently.
грудня 02, 2025
Shipping updates are consistently accurate and timely, enhancing trust.
грудня 02, 2025
Consistently quick dispatch, I appreciate their efficiency.
грудня 02, 2025
Customer support is always just a call or message away—fast and friendly.
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Frequently Asked Questions (FAQ)
What are the key features of the Vishay SISA72ADN-T1-GE3 MOSFET?
The Vishay SISA72ADN-T1-GE3 is a N-Channel Power MOSFET with a voltage rating of 40V and a continuous drain current of 25.4A, designed for efficient power switching with low Rds(on) values. It is built using TrenchFET® Gen IV technology and features surface mount PowerPAK® packaging for high performance and reliability.
Is the Vishay SISA72ADN-T1-GE3 suitable for high power applications?
Yes, this MOSFET is suitable for high power applications, with a peak pulsed drain current of up to 94A and power dissipation capabilities of up to 52W at the case temperature. Its low Rds(on) and high current capacity make it ideal for power switching and motor control circuits.
What are the compatibility and drive voltage requirements for this MOSFET?
The MOSFET requires a maximum gate-to-source voltage of +20V and a minimum of 4.5V for proper operation. It operates efficiently with a gate charge of approximately 50nC at 10V, making it compatible with standard logic and gate driver circuits.
What are the advantages of using the PowerPAK® 1212-8 package for this MOSFET?
The PowerPAK® 1212-8 package offers excellent thermal performance, compact size, and reliable surface mount features, enabling improved heat dissipation and easier integration into various electronic devices and power modules.
Does the Vishay SISA72ADN-T1-GE3 meet environmental and safety standards?
Yes, this MOSFET is ROHS3 compliant, has a moisture sensitivity level of 1 (unlimited), and adheres to REACH regulations, ensuring it meets common environmental and safety standards for electronic components.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SISA72ADN-T1-GE3 CAD Models
Vishay Siliconix SISA72ADN-T1-GE3 PCB symbols & footprints
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