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SISA12ADN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 25A PPAK1212-8
77323 Pcs New Original In Stock
N-Channel 30 V 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8
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5.0 / 5.0
- (257 Ratings)
SISA12ADN-T1-GE3
Product Overview
12787280
DiGi Electronics Part Number
SISA12ADN-T1-GE3-DGManufacturer
Vishay Siliconix
SISA12ADN-T1-GE3
Description
MOSFET N-CH 30V 25A PPAK1212-8Inventory
77323 Pcs New Original In Stock
N-Channel 30 V 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8
Quantity
Minimum 1
Minimum 1
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SISA12ADN-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
2070 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SISA12
Datasheet & Documents
HTML Datasheet
SISA12ADN-T1-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SISA12ADN-T1-GE3-DG
SISA12ADN-T1-GE3TR
SISA12ADN-T1-GE3CT
SISA12ADN-T1-GE3DKR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
грудня 02, 2025
DiGi Electronics 讓我們在庫存管理上更有信心，合作一直非常愉快！
грудня 02, 2025
The speed and efficiency of their logistics are critical in maintaining my project timelines.
грудня 02, 2025
The packaging was environmentally friendly and used minimal plastic, demonstrating a strong commitment to sustainability.
грудня 02, 2025
The products feel solid and professionally manufactured, reflecting excellent quality standards.
грудня 02, 2025
I’m very satisfied with how quickly they handle inquiries after purchase.
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Frequently Asked Questions (FAQ)
How does the SISA12ADN-T1-GE3 perform in high-temperature environments when operating near its 25A continuous drain current limit, and what PCB design considerations help mitigate thermal runaway risk?
The SISA12ADN-T1-GE3 is rated for 25A (Tc) with a junction temperature range up to 150°C, but sustaining high current at elevated temperatures requires careful thermal management. Due to its 28W (Tc) power dissipation capability, achieving this requires a well-designed PCB with sufficient copper pour (typically ≥ 1 in² of 2 oz copper) connected to the source pads for heatsinking. Without adequate thermal vias and copper area, the device can experience thermal runaway even below 25A. We recommend monitoring TJ using thermal simulations or IR imaging during prototype testing, especially in enclosed or convection-limited enclosures. Use of thermal relief patterns and minimizing thermal resistance from junction to ambient (RθJA) below 45°C/W is critical for long-term reliability under sustained loads.
Can the SISA12ADN-T1-GE3 reliably replace the Infineon OptiMOS 30V BSC028N03MSG in a synchronous buck converter, and what are the key performance trade-offs in switching efficiency?
Yes, the SISA12ADN-T1-GE3 can serve as a viable drop-in alternative to the BSC028N03MSG in most 30V synchronous buck applications, offering a comparable 4.3mOhm Rds On at 10V but with a slightly higher gate charge (45nC vs 38nC). This increased Qg may lead to higher switching losses at frequencies above 300 kHz, so evaluate total losses (conduction + switching) across your operating range. The SISA12ADN-T1-GE3's lower cost and availability in tape-and-reel make it attractive, but ensure the driver can source/sink sufficient current to charge/discharge the gate quickly. Also confirm the threshold voltage compatibility—Vgs(th) max of 2.2V ensures full enhancement with standard 4.5V–10V logic-level drivers.
What risks should I consider when using the SISA12ADN-T1-GE3 in a parallel FET configuration for higher current output?
When paralleling SISA12ADN-T1-GE3 MOSFETs, the primary risks are uneven current sharing and oscillation due to PCB layout imbalances. Despite matching Rds On and Vgs(th) on paper, thermal coupling and trace inductance mismatches can cause one device to hog current. To mitigate, ensure symmetric PCB layout with matched gate drive path lengths and separate source Kelvin connections. Use small gate resistors (e.g., 4.7Ω) to dampen ringing and consider soft switching techniques. Also, avoid shared gate nodes without individual resistors, as this increases risk of cross-talk and shoot-through in high dI/dt scenarios. Thermal derating becomes essential—even with heatsinking, parallel devices may require 15–20% derating per additional FET due to localized heating.
How does the PowerPAK® 1212-8 package of the SISA12ADN-T1-GE3 impact thermal performance compared to traditional D-Pak or PowerPAK 3x3 in high-density designs?
The PowerPAK® 1212-8 package in the SISA12ADN-T1-GE3 offers superior thermal performance over D-Pak and even PowerPAK 3x3 due to reduced die-to-board thermal resistance and bottom-side cooling capability. Its dual-source, dual-drain configuration lowers parasitic inductance and resistance, improving both electrical and thermal efficiency. However, in high-density layouts, thermal crosstalk with adjacent components can degrade performance. Ensure at least 2mm clearance around the device and use thermal vias under the exposed pad to inner-layer ground planes. Unlike D-Pak, the 1212-8 has no through-hole mechanical support, so board flex and vibration resistance must be evaluated in rugged environments. Reflow profile control is critical—follow Vishay’s guidelines to prevent tombstoning due to thermal imbalances during soldering.
Is the SISA12ADN-T1-GE3 suitable for use with 4.5V gate drive in low-voltage motor control, and how does Rds On behave under those conditions?
Yes, the SISA12ADN-T1-GE3 is fully suitable for 4.5V gate drive applications such as low-voltage motor control. It specifies Rds On (max) at 4.5V drive, ensuring enhancement down to this level. While the 4.3mOhm spec is measured at 10V, at 4.5V Vgs the Rds On increases—typically ~1.3 to 1.6x higher (~5.6–6.9mOhm)—based on the transfer characteristics of TrenchFET® technology. This must be factored into conduction loss calculations, especially at high duty cycles. For battery-powered systems where voltage sag is expected, confirm operation at minimum system voltage (e.g., 3.8V) still provides adequate Rds On. Use of a dedicated gate driver or charge pump may be necessary if sustained peak currents exceed 20A at low Vgs.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SISA12ADN-T1-GE3 CAD Models
Vishay Siliconix SISA12ADN-T1-GE3 PCB symbols & footprints
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