SIS612EDNT-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 50A PPAK1212-8S
1538 Pcs New Original In Stock
90 - Da or Exchange - Defective par.7383 Pcs New Original In Stock7383 Pcs New Original In Stock
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SIS612EDNT-T1-GE3 Vishay Siliconix
4.9 / 5.0 - (199 Ratings)

SIS612EDNT-T1-GE3

Product Overview

12786535

DiGi Electronics Part Number

SIS612EDNT-T1-GE3-DG

Manufacturer

Vishay Siliconix
SIS612EDNT-T1-GE3

Description

MOSFET N-CH 20V 50A PPAK1212-8S

Inventory

1538 Pcs New Original In Stock
N-Channel 20 V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S
Quantity
Minimum 1

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SIS612EDNT-T1-GE3 Technical Specifications

Category Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Vishay

Packaging -

Series TrenchFET®

Product Status Obsolete

FET Type N-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 20 V

Current - Continuous Drain (Id) @ 25°C 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V

Rds On (Max) @ Id, Vgs 3.9mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id 1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V

Vgs (Max) ±12V

Input Capacitance (Ciss) (Max) @ Vds 2060 pF @ 10 V

FET Feature -

Power Dissipation (Max) 3.7W (Ta), 52W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PowerPAK® 1212-8S

Package / Case PowerPAK® 1212-8S

Base Product Number SIS612

Datasheet & Documents

HTML Datasheet

SIS612EDNT-T1-GE3-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
SIS612EDNT-T1-GE3-DG
SIS612EDNT-T1-GE3CT
SIS612EDNT-T1-GE3TR
SIS612EDNT-T1-GE3DKR
Q8619879
Standard Package
3,000

Alternative Models

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
SISA26DN-T1-GE3
Vishay Siliconix
17173
SISA26DN-T1-GE3-DG
0.2462
MFR Recommended

Frequently Asked Questions (FAQ)

What is the main function of the Vishay SIS612EDNT-T1-GE3 MOSFET?
The Vishay SIS612EDNT-T1-GE3 is an N-channel MOSFET designed for switching and power management applications, capable of handling up to 50A and 20V, making it suitable for high-efficiency power circuits.
Is the Vishay SIS612EDNT-T1-GE3 compatible with surface mount PCB designs?
Yes, this MOSFET features a surface mount PowerPAK® 1212-8S package, which is optimized for high-density PCB layouts and easy installation in surface-mount designs.
What are the key advantages of using the Vishay TrenchFET® series MOSFET?
The TrenchFET® series offers low Rds On, high current capacity, and excellent thermal performance, enabling efficient power switching with reduced heat generation and energy loss.
Can the Vishay SIS612EDNT-T1-GE3 operate in high-temperature environments?
Yes, it has a maximum operating temperature of up to 150°C, making it suitable for demanding applications that require reliable performance at elevated temperatures.
Is the Vishay SIS612EDNT-T1-GE3 MOSFET RoHS compliant and suitable for environmental standards?
Yes, this product is RoHS3 compliant, ensuring it meets environmental standards for restricted hazardous substances, making it safer for eco-friendly and compliant electronics production.
DiGi Certification
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SIS612EDNT-T1-GE3 CAD Models

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