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SIR494DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 12V 60A PPAK SO-8
16450 Pcs New Original In Stock
N-Channel 12 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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5.0 / 5.0
- (220 Ratings)
SIR494DP-T1-GE3
Product Overview
12786154
DiGi Electronics Part Number
SIR494DP-T1-GE3-DGManufacturer
Vishay Siliconix
SIR494DP-T1-GE3
Description
MOSFET N-CH 12V 60A PPAK SO-8Inventory
16450 Pcs New Original In Stock
N-Channel 12 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Quantity
Minimum 1
Minimum 1
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SIR494DP-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
-
Series
TrenchFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR494
Datasheet & Documents
HTML Datasheet
SIR494DP-T1-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Additional Information
Other Names
SIR494DP-T1-GE3TR
SIR494DPT1GE3
SIR494DP-T1-GE3DKR
SIR494DP-T1-GE3CT
SIR494DP-T1-GE3-DG
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
грудня 02, 2025
快速出貨，大大提升了我的購物體驗，包裝也非常安全，滿意！
грудня 02, 2025
I appreciate how DiGi Electronics maintains price transparency across all transactions.
грудня 02, 2025
Their products help me stay productive, and their prices are just right.
грудня 02, 2025
The sustainable packaging materials made me feel good about my purchase, knowing it’s environmentally responsible.
грудня 02, 2025
Their reliable, long-lasting components are perfect for building projects that need to stand up to tough conditions.
грудня 02, 2025
The after-sales support from DiGi Electronics is exceptional; they tracked my shipment closely and kept me updated throughout.
грудня 02, 2025
Easy to modify my cart before finalizing the purchase, thanks to the user-friendly design.
грудня 02, 2025
Their professional approach makes every purchase a positive experience.
грудня 02, 2025
Their commitment to quality control ensures every product performs as promised.
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Frequently Asked Questions (FAQ)
Given the SIR494DP-T1-GE3 is an obsolete part, what are the key considerations and recommended Vishay Siliconix or alternative MOSFETs to select for a reliable 12V, 60A application where the SIR494DP-T1-GE3 was previously used?
When replacing the obsolete SIR494DP-T1-GE3, prioritize finding a MOSFET with comparable or improved Rds(on) at 10V Vgs and 20A Id, a similar continuous drain current rating (60A Tc), and a Vds rating of at least 12V. Key considerations include thermals and package compatibility. Look for Vishay's current TrenchFET® offerings or reputable competitors like Infineon or ON Semiconductor. For instance, a Vishay SiR426DP or SiR432DP might be suitable direct replacements, but verify their specific Rds(on) specifications, gate charge (Qg) for switching efficiency, and thermal performance in your PowerPAK® SO-8 equivalent package. Always perform thorough thermal simulations and potentially component-level testing to mitigate risks associated with parameter drift in new parts.
What are the potential design risks if I push the SIR494DP-T1-GE3 beyond its specified 12V drain-source voltage, even for transient conditions in a 12V automotive power system?
Pushing the SIR494DP-T1-GE3 beyond its 12V Vds rating, even transiently, poses significant risks of avalanche breakdown, leading to permanent damage and device failure. While the datasheet might imply some tolerance, operating close to or exceeding the absolute maximum rating significantly degrades the MOSFET's reliability and shortens its operational lifespan. In automotive environments with potential voltage spikes, consider adding robust transient voltage suppression (TVS) diodes or employing overvoltage protection circuits in parallel with the SIR494DP-T1-GE3 to safeguard against these unpredictable transients and prevent catastrophic failure.
How can I effectively manage thermal dissipation for the SIR494DP-T1-GE3 when operating at its maximum continuous drain current of 60A (Tc) in a constrained PCB area, potentially leading to premature failure?
Operating the SIR494DP-T1-GE3 at 60A (Tc) requires careful thermal management due to its 104W (Tc) dissipation capability. To mitigate premature failure, ensure ample copper pour on the PCB connected to the drain and source terminals, utilizing thermal vias to conduct heat to inner layers. The PowerPAK® SO-8 package is designed for efficient heat transfer, but maximizing PCB copper area is crucial. Consider forced air cooling or a small heatsink if ambient temperatures are high or duty cycles are continuous. Underestimating thermal requirements is a common risk; perform thermal simulations and verify junction temperature under worst-case operating conditions to ensure the SIR494DP-T1-GE3 remains well within its -55°C to 150°C TJ limits.
What are the practical implications of the SIR494DP-T1-GE3's gate charge (Qg) and input capacitance (Ciss) on switching speed and potential EMI issues when used in a high-frequency switching application, and how can I mitigate these?
The SIR494DP-T1-GE3 has a Qg of 150 nC and Ciss of 6900 pF, which can impact switching speed and generate electromagnetic interference (EMI) at higher frequencies. A higher Qg requires more gate drive current and time to switch, leading to increased switching losses and potential ringing. To mitigate these, optimize your gate driver circuit for sufficient current sourcing/sinking capability. Use short, low-inductance traces for the gate drive loop and consider adding small gate resistors to damp oscillations and control switching slew rates. Careful PCB layout, including proper decoupling capacitors and potentially shielding, can also help minimize EMI issues arising from the SIR494DP-T1-GE3's switching characteristics.
What are the risks associated with the SIR494DP-T1-GE3's relatively low gate threshold voltage (Vgs(th) = 2.5V @ 250µA) when designing for reliable turn-on in a noisy 12V power supply system?
The SIR494DP-T1-GE3's low gate threshold voltage of 2.5V (Vgs(th)) presents a risk of inadvertent turn-on or erratic behavior in electrically noisy 12V systems. If the gate voltage fluctuates and crosses this threshold due to noise coupling or inadequate filtering, the MOSFET could partially or fully turn on unexpectedly, leading to increased power dissipation or unintended circuit operation. To mitigate this, employ a robust gate drive circuit with sufficient noise immunity, including proper filtering and potentially a pull-down resistor on the gate. Ensure the gate driver's output voltage is well above the Vgs(th) for reliable full turn-on, and consider using a higher drive voltage (e.g., 10V as specified for optimal Rds(on)) to provide a larger noise margin for the SIR494DP-T1-GE3.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SIR494DP-T1-GE3 CAD Models
Vishay Siliconix SIR494DP-T1-GE3 PCB symbols & footprints
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