SIR494DP-T1-GE3 Vishay Siliconix
5.0 / 5.0 - (202 Ratings)

SIR494DP-T1-GE3

Product Overview

12786154

DiGi Electronics Part Number

SIR494DP-T1-GE3-DG

Manufacturer

Vishay Siliconix
SIR494DP-T1-GE3

Description

MOSFET N-CH 12V 60A PPAK SO-8

Inventory

RFQ Online
N-Channel 12 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Single FETs, MOSFETs
SIR494DP-T1-GE3 Datasheet
Quantity
Minimum 1

Purchase and inquiry

RFQ (Request for Quotations)

You can submit your RFQ inquiry directly on the product detail page or RFQ page. Our sales team will respond to your request within 24 hours.

Payment method

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IMPORTANT NOTICE

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Minimum 1
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SIR494DP-T1-GE3 Technical Specifications

Category FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Vishay

Packaging -

Series TrenchFET®

Product Status Obsolete

FET Type N-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 12 V

Current - Continuous Drain (Id) @ 25°C 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 1.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V

Vgs (Max) ±20V

Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 6 V

FET Feature -

Power Dissipation (Max) 6.25W (Ta), 104W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PowerPAK® SO-8

Package / Case PowerPAK® SO-8

Base Product Number SIR494

Datasheet & Documents

Datasheets

Download SIR494DP-T1-GE3 Product Specification (PDF)
HTML Datasheet

SIR494DP-T1-GE3-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant

Additional Information

Other Names
SIR494DP-T1-GE3TR
SIR494DPT1GE3
SIR494DP-T1-GE3DKR
SIR494DP-T1-GE3CT
SIR494DP-T1-GE3-DG
Standard Package
3,000
DIGI Certification
ISO 209001_2015
ISO 209001_2015
ISO 14001_2015
ISO 2014001_2015
ISO 45001_2018
ISO 2045001_2018
DUNS REGISTERED
DUNS REGISTERED
Companines Registry
Companines Registry
ASA Certificate
ASA Certificate
UKAS
UKAS
ESD Certificate
ESD Certificate
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