SIR172DP-T1-GE3 Vishay Siliconix
5.0 / 5.0 - (411 Ratings)

SIR172DP-T1-GE3

Product Overview

12786991

DiGi Electronics Part Number

SIR172DP-T1-GE3-DG

Manufacturer

Vishay Siliconix
SIR172DP-T1-GE3

Description

MOSFET N-CH 30V 20A PPAK SO-8

Inventory

89800 Pcs New Original In Stock
N-Channel 30 V 20A (Tc) 29.8W (Tc) Surface Mount PowerPAK® SO-8
Quantity
Minimum 1

Purchase and inquiry

RFQ (Request for Quotations)

You can submit your RFQ inquiry directly on the product detail page or RFQ page. Our sales team will respond to your request within 24 hours.

Payment method

We offer the several convenient payment method including PayPal (recommended for new customers), Credit Cards, and Wire Transfers(T/T) by USD, EUR, HKD and others.

IMPORTANT NOTICE

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SIR172DP-T1-GE3 Technical Specifications

Category FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Vishay

Packaging -

Series TrenchFET®

Product Status Obsolete

FET Type N-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 30 V

Current - Continuous Drain (Id) @ 25°C 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 8.9mOhm @ 16.1A, 10V

Vgs(th) (Max) @ Id 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V

Vgs (Max) ±20V

Input Capacitance (Ciss) (Max) @ Vds 997 pF @ 15 V

FET Feature -

Power Dissipation (Max) 29.8W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PowerPAK® SO-8

Package / Case PowerPAK® SO-8

Base Product Number SIR172

Datasheet & Documents

HTML Datasheet

SIR172DP-T1-GE3-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
SIR172DP-T1-GE3DKR
SIR172DP-T1-GE3TR
SIR172DP-T1-GE3CT
SIR172DP-T1-GE3-DG
Standard Package
3,000

Alternative Models

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