SIP32401ADNP-T1GE4 >
SIP32401ADNP-T1GE4
Vishay Siliconix
IC PWR SWITCH N-CHAN 1:1 4TDFN
6140 Pcs New Original In Stock
Power Switch/Driver 1:1 N-Channel 2.4A 4-TDFN (1.2x1.6)
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SIP32401ADNP-T1GE4 Vishay Siliconix
5.0 / 5.0 - (223 Ratings)

SIP32401ADNP-T1GE4

Product Overview

1127919

DiGi Electronics Part Number

SIP32401ADNP-T1GE4-DG

Manufacturer

Vishay Siliconix
SIP32401ADNP-T1GE4

Description

IC PWR SWITCH N-CHAN 1:1 4TDFN

Inventory

6140 Pcs New Original In Stock
Power Switch/Driver 1:1 N-Channel 2.4A 4-TDFN (1.2x1.6)
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.5415 0.5415
  • 10 0.4364 4.3640
  • 30 0.3838 11.5140
  • 100 0.3328 33.2800
  • 500 0.3021 151.0500
  • 1000 0.2861 286.1000
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SIP32401ADNP-T1GE4 Technical Specifications

Category Power Management (PMIC), Power Distribution Switches, Load Drivers

Manufacturer Vishay

Packaging Tape & Reel (TR)

Series -

Product Status Active

Switch Type General Purpose

Number of Outputs 1

Ratio - Input:Output 1:1

Output Configuration High Side

Output Type N-Channel

Interface On/Off

Voltage - Load 1.1V ~ 5.5V

Voltage - Supply (Vcc/Vdd) Not Required

Current - Output (Max) 2.4A

Rds On (Typ) 62mOhm

Input Type Non-Inverting

Features Slew Rate Controlled

Fault Protection Reverse Current

Operating Temperature -40°C ~ 125°C (TJ)

Mounting Type Surface Mount

Supplier Device Package 4-TDFN (1.2x1.6)

Package / Case 4-UFDFN Exposed Pad

Base Product Number SIP32401

Datasheet & Documents

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8542.39.0001

Additional Information

Other Names
SIP32401ADNPT1GE4
SIP32401ADNP-T1GE4TR
SIP32401ADNP-T1GE4CT
SIP32401ADNP-T1GE4DKR
Standard Package
3,000

Reviews

5.0/5.0-(Show up to 5 Ratings)
NuitE***antée
грудня 02, 2025
5.0
Le respect de l’environnement dans leur processus logistique me donne confiance.
Mon***rahl
грудня 02, 2025
5.0
Der Kundenservice ist wirklich ausgezeichnet. Sie nehmen sich Zeit, um alle Anliegen zu klären.
ち***ょう
грудня 02, 2025
5.0
配送の正確さとスピードが非常に高水準で、信頼できます。
Celest***Dreams
грудня 02, 2025
5.0
Their products are synonymous with durability and quality.
Op***ky
грудня 02, 2025
5.0
Order arrived on time, and the secure packaging kept everything intact.
Radia***Quest
грудня 02, 2025
5.0
Their customer support is prompt, friendly, and always effective.
Shim***Grace
грудня 02, 2025
5.0
Fast shipping combined with excellent product construction makes their offerings stand out.
Dreamsc***Journey
грудня 02, 2025
5.0
Their quick logistics and prompt after-sales support are key reasons for our ongoing partnership.
Char***gWave
грудня 02, 2025
5.0
This store offers a perfect combination of affordability and consistent quality.
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Frequently Asked Questions (FAQ)

Can the SIP32401ADNP-T1GE4 safely replace a load switch in a battery-powered IoT device where minimizing quiescent current and thermal buildup is critical, and how does its Rds(on) compare to alternatives like the TPS22965 or AP22814?

The SIP32401ADNP-T1GE4 is well-suited for battery-powered IoT applications due to its ultra-low 62mΩ typical Rds(on), which reduces conduction losses and thermal stress compared to higher-resistance switches. Unlike some integrated load switches (e.g., TPS22965 with ~45mΩ but higher quiescent current), the SIP32401ADNP-T1GE4 operates without a Vcc supply rail, drawing no gate-drive current when off—ideal for always-on systems. However, it lacks integrated slew-rate control beyond internal design, so if precise inrush current management is needed, consider adding an external RC network. While the AP22814 offers similar Rds(on), it requires a higher input voltage range; the SIP32401ADNP-T1GE4’s 1.1V–5.5V compatibility makes it better for low-voltage rails like 1.2V or 1.8V cores.

What are the key reliability risks when using the SIP32401ADNP-T1GE4 in high-vibration industrial environments, and how does its 4-TDFN package affect long-term solder joint integrity?

The SIP32401ADNP-T1GE4’s 4-TDFN (1.2x1.6mm) package with exposed pad offers excellent thermal performance but presents mechanical reliability concerns in high-vibration settings. The small footprint and minimal lead structure increase susceptibility to fatigue cracking at solder joints over time. To mitigate this, use a robust solder paste (e.g., SAC305 with no-clean flux), ensure full wetting of the exposed thermal pad, and consider underfill or conformal coating if the PCB is subject to shock or cyclic stress. Additionally, avoid placing the device near board edges or high-flex zones. Its MSL 1 rating means no baking is required pre-assembly, reducing handling risks during manufacturing.

How does the absence of a dedicated Vcc/Vdd supply pin on the SIP32401ADNP-T1GE4 impact integration into systems with split power domains, such as 3.3V logic controlling a 1.2V rail?

The SIP32401ADNP-T1GE4’s non-inverting input interface allows direct drive from logic levels as low as 1.1V, eliminating the need for level-shifting when enabling a 1.2V rail from a 1.2V or 3.3V microcontroller GPIO. This simplifies power domain isolation and reduces BOM complexity. However, because the gate drive is derived internally from the load voltage (not an external Vcc), ensure the enable signal does not exceed the load voltage by more than 0.3V to avoid latch-up or ESD damage. In split-domain designs, verify that ground references are solidly connected to prevent floating conditions that could cause unintended turn-on.

Is the SIP32401ADNP-T1GE4 a viable drop-in replacement for older P-channel high-side switches like the SiP32501 in 5V USB power paths, and what trade-offs should be considered?

While both are high-side switches from Vishay Siliconix, the SIP32401ADNP-T1GE4 (N-channel) is not a direct electrical drop-in for the P-channel SiP32501 due to differing gate-drive requirements and input logic polarity. However, it offers superior Rds(on) (62mΩ vs. ~100mΩ for SiP32501) and better thermal efficiency in 5V USB applications. To replace the SiP32501, you must ensure the enable signal is active-high (non-inverting) and compatible with the load voltage. Also, confirm layout compatibility—the 4-TDFN package is smaller than typical SOT-23 used by SiP32501, so footprint adaptation may be needed. The trade-off is added design effort versus gains in power density and conduction loss.

What inrush current mitigation strategies are effective with the SIP32401ADNP-T1GE4 in capacitive load scenarios, given it only specifies 'slew rate controlled' without detailed timing specs?

The SIP32401ADNP-T1GE4 includes internal slew-rate control to limit di/dt during turn-on, but it is not user-configurable and may be insufficient for large capacitive loads (>100µF). To manage inrush, add an external RC network between the EN pin and ground to slow the enable signal rise time, effectively extending the soft-start duration. Alternatively, place a small series resistor (1–10Ω) in the output path to dampen peak current, though this increases conduction loss. Always validate with worst-case capacitance and cold-start conditions, as the internal control loop may not fully suppress overshoot in high-cap scenarios. For precise control, consider pairing with a dedicated load switch IC, but the SIP32401ADNP-T1GE4 remains a strong choice for moderate capacitive loads under 47µF.

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