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FCH043N60
onsemi
MOSFET N-CH 600V 75A TO247-3
1411 Pcs New Original In Stock
N-Channel 600 V 75A (Tc) 592W (Tc) Through Hole TO-247-3
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5.0 / 5.0
- (328 Ratings)
FCH043N60
Product Overview
12839481
DiGi Electronics Part Number
FCH043N60-DGManufacturer
onsemi
FCH043N60
Description
MOSFET N-CH 600V 75A TO247-3Inventory
1411 Pcs New Original In Stock
N-Channel 600 V 75A (Tc) 592W (Tc) Through Hole TO-247-3
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
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FCH043N60 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
-
Series
SuperFET® II
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
43mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
215 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12225 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
592W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
FCH043
Datasheet & Documents
HTML Datasheet
FCH043N60-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
ONSONSFCH043N60
2156-FCH043N60-OS
Standard Package
30
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
грудня 02, 2025
Jede Erfahrung bei DiGi Electronics bestätigt die hohe Produktverlässlichkeit und Preis-Transparenz.
грудня 02, 2025
The packaging quality exceeded my expectations, sturdy and visually appealing at the same time.
грудня 02, 2025
I appreciate the company's efforts in using packaging that minimizes environmental impact, paired with quick logistics.
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Frequently Asked Questions (FAQ)
Can the FCH043N60 be safely replaced with the SIHG64N65E-GE3 in a high-frequency PFC circuit, and what design risks should I consider?
While the SIHG64N65E-GE3 has a higher voltage rating (650V vs. 600V) and similar current capability, its significantly higher gate charge (320 nC vs. 215 nC for the FCH043N60) increases switching losses and may require redesign of the gate drive circuit. Additionally, the SIHG64N65E-GE3 has a higher output capacitance, which can impact ZVS performance in resonant topologies. You must verify gate driver current capability, re-evaluate dead-time margins, and confirm thermal performance under actual switching frequency—especially above 50 kHz—to avoid shoot-through or excessive junction temperature rise.
What are the key reliability concerns when using the FCH043N60 in a motor drive application with frequent start-stop cycles and inductive kickback?
The FCH043N60, while robust with a 600V rating, is susceptible to avalanche energy stress during inductive switching events common in motor drives. Although it supports limited unclamped inductive switching (UIS), repeated high-energy transients without a properly rated snubber or TVS clamp can degrade the device over time. Ensure your design includes a fast-recovery freewheeling diode or active clamp circuit, and never rely solely on the MOSFET’s intrinsic body diode. Also, monitor case temperature closely—thermal cycling from frequent starts accelerates bond wire fatigue, especially near the 150°C Tj limit.
How does the FCH043N60 compare to the IXFH80N65X2 for use in a 400V DC-link inverter, particularly regarding switching speed and EMI trade-offs?
The IXFH80N65X2 offers lower Rds(on) (35 mΩ vs. 43 mΩ) and higher current rating, but its much larger input capacitance (18,500 pF vs. 12,225 pF) results in slower turn-on/off times unless driven with a high-current gate driver. In a 400V inverter, this increases switching overlap losses and generates higher dv/dt, potentially worsening EMI. The FCH043N60’s lower Qg allows faster switching with simpler drive circuitry, reducing EMI filtering needs—but you must balance this against its slightly higher conduction loss. For compact, high-efficiency designs, the FCH043N60 may offer better overall system optimization if gate drive is robust.
Is it safe to parallel two FCH043N60 MOSFETs in a high-current SMPS output stage, and what layout precautions are critical to avoid current imbalance?
Paralleling FCH043N60 devices is possible but risky without strict layout symmetry and gate drive matching. Due to the positive temperature coefficient of Rds(on), thermal runaway is less likely than in bipolar devices, but minor differences in gate threshold voltage (up to ±0.5V) can cause uneven current sharing during turn-on. Use a single, low-inductance gate resistor per device (not shared), ensure identical trace lengths from driver to each gate, and mount both on a common heatsink with thermal paste uniformity. Include source sense resistors (e.g., 1–5 mΩ) if precision current sharing is required. Always validate sharing under full load and transient conditions.
Given that the FCH043N60 is marked obsolete by onsemi, what long-term supply chain and qualification risks should I evaluate before designing it into a new industrial power supply?
Designing in an obsolete part like the FCH043N60 introduces significant lifecycle risk—onsemi will not support new designs, and last-time buy windows may have passed. Even if stock exists, future shortages could force costly requalification. Evaluate second-source compatibility early: while substitutes like IXKR47N60C5 exist, they require full electrical and thermal revalidation. Consider migrating to a modern alternative such as the NVHL120N65S3F (onsemi’s current SuperFET III offering) during prototype phase to future-proof your design. If committed to FCH043N60, secure a multi-year inventory agreement and document a formal obsolescence mitigation plan, including drop-in replacement testing and firmware adaptability for gate drive adjustments.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
FCH043N60 CAD Models
onsemi FCH043N60 PCB symbols & footprints
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