25LC160BT-I/ST >
25LC160BT-I/ST
Microchip Technology
IC EEPROM 16KBIT SPI 8TSSOP
2112 Pcs New Original In Stock
EEPROM Memory IC 16Kbit SPI 10 MHz 8-TSSOP
Request Quote (Ships tomorrow)
*Quantity
Minimum 1
25LC160BT-I/ST Microchip Technology
5.0 / 5.0 - (481 Ratings)

25LC160BT-I/ST

Product Overview

1240068

DiGi Electronics Part Number

25LC160BT-I/ST-DG
25LC160BT-I/ST

Description

IC EEPROM 16KBIT SPI 8TSSOP

Inventory

2112 Pcs New Original In Stock
EEPROM Memory IC 16Kbit SPI 10 MHz 8-TSSOP
Memory
Quantity
Minimum 1

Purchase and inquiry

Quality Assurance

365 - Day Quality Guarantee - Every part fully backed.

90 - Day Refund or Exchange - Defective parts? No hassle.

Limited Stock, Order Now - Get reliable parts without worry.

Global Shipping & Secure Packaging

Worldwide Delivery in 3-5 Business Days

100% ESD Anti-Static Packaging

Real-Time Tracking for Every Order

Secure & Flexible Payment

Credit Card, VISA, MasterCard, PayPal, Western Union, Telegraphic Transfer(T/T) and more

All payments encrypted for security

In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 1.6232 1.6232
Better Price by Online RFQ.
Request Quote (Ships tomorrow)
* Quantity
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours

25LC160BT-I/ST Technical Specifications

Category Memory, Memory

Manufacturer Microchip Technology

Packaging -

Series -

Product Status Active

DiGi-Electronics Programmable Not Verified

Memory Type Non-Volatile

Memory Format EEPROM

Technology EEPROM

Memory Size 16Kbit

Memory Organization 2K x 8

Memory Interface SPI

Clock Frequency 10 MHz

Write Cycle Time - Word, Page 5ms

Voltage - Supply 2.5V ~ 5.5V

Operating Temperature -40°C ~ 85°C (TA)

Mounting Type Surface Mount

Package / Case 8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package 8-TSSOP

Base Product Number 25LC160

Datasheet & Documents

HTML Datasheet

25LC160BT-I/ST-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051

Additional Information

Other Names
25LC160BT-I/ST-NDR
Standard Package
2,500

Alternative Parts

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
25LC160AT-E/ST
Microchip Technology
1074
25LC160AT-E/ST-DG
0.3375
MFR Recommended
CAT25160YI-GT3
onsemi
3090
CAT25160YI-GT3-DG
0.0661
MFR Recommended
R1EX25016ATA00I#S0
Renesas Electronics Corporation
3922
R1EX25016ATA00I#S0-DG
1.8030
MFR Recommended
25LC160B-I/ST
Microchip Technology
1565
25LC160B-I/ST-DG
0.3078
Direct
S-25C160A0I-T8T1U3
ABLIC Inc.
719
S-25C160A0I-T8T1U3-DG
0.0803
MFR Recommended

Understanding the Microchip 25LC160BT-I/ST: A 16Kbit Serial EEPROM for Reliable Embedded Storage

Product overview of the Microchip 25LC160BT-I/ST

The Microchip 25LC160BT-I/ST represents a robust solution for non-volatile data storage in constrained embedded architectures. Integrating 16Kbits of EEPROM and operating via the industry-standard Serial Peripheral Interface (SPI), this device provides designers with a seamless balance of reliability, scalability, and ease of deployment. The SPI protocol enables high-speed serial communication with minimal CPU overhead, reducing firmware complexity while maximizing data throughput. This approach supports efficient interfacing with a variety of microcontrollers and FPGAs, ensuring flexibility across diverse application scenarios.

At the hardware level, the 25LC160BT-I/ST optimizes system real estate with its ultra-compact 8-TSSOP package, facilitating dense board layouts common in modern embedded systems. The EEPROM structure incorporates advanced wear-leveling algorithms, enhancing endurance far beyond basic memory cell specifications. This design ensures consistent write-erase cycles even in high-frequency logging or configuration storage applications. The device's built-in data protection mechanisms—such as write protection and user-selectable block protection—provide reliable safeguards against unintentional modification, a critical requirement for systems handling configuration parameters or calibration values.

Operational robustness underpins the device’s utility in mission-critical environments. Rated for a broad industrial temperature range, the 25LC160BT-I/ST maintains data retention and performance integrity under severe thermal stress, making it suitable for automotive ECUs, industrial automation nodes, and consumer IoT endpoints. Its low quiescent current allows for deployment in battery-powered or energy-harvesting applications, helping extend operational lifespans without sacrificing performance.

In the context of practical integration, the 25LC160BT-I/ST excels in scenarios where firmware updates or authentication sequences must be executed securely and repeatedly. For instance, storing cryptographic keys or calibration data in the EEPROM ensures resilience against power outages and system resets. Engineers have recognized the advantages of its single-supply operation and straightforward SPI command set, which reduce hardware complexity and accelerate time-to-market during rapid prototyping and volume production phases.

Selecting the 25LC160BT-I/ST addresses demands for non-volatile memory solutions that prioritize both efficiency and endurance. Its architecture supports predictable timing and deterministic operation, minimizing integration risks and system troubleshooting overhead. In environments where space, energy budgets, and data persistence converge as key constraints, the device's combination of compact form factor, electrical resilience, and flexible interfacing positions it as a leading choice for storage-centric embedded designs.

Key features of the 25LC160BT-I/ST

The 25LC160BT-I/ST exemplifies robust engineering refinement in serial EEPROM design, integrating low-power CMOS logic with an organized 2,048 × 8-bit nonvolatile memory array. At the foundational layer, this architecture leverages energy-efficient CMOS processes, minimizing quiescent and dynamic power consumption even at elevated clock speeds. Its architecture supports both granular byte-wise addressing and page-level access methods. This dual-access paradigm facilitates atomic byte updates for individualized configuration parameters while enabling high-throughput modifications via page operations during bulk data logging or block structuring in firmware.

Performance scalability is achieved through support for SPI clock frequencies up to 10 MHz when operating at Vcc ≥ 4.5 V, permitting rapid data interchange without inducing signal deterioration or timing violations in critical system paths. The selectable 16-byte and 32-byte page write modes empower the designer to match memory access patterns to application requirements—an optimization crucial for tasks involving transaction buffering, configuration state snapshots, or fast firmware notifications. Structuring firmware to exploit page operations can reduce transaction latency and simplify error correction routines across embedded and instrumentation platforms.

On the protection front, the device integrates multidimensional hardware safeguards for data integrity and system security. Its block write protection system is configurable from no-protection to quarter, half, or full array coverage, enhancing flexibility suited to both prototyping and deployment. The combination of a dedicated write-protect pin, power-up/down protection sequencers, and a write enable latch minimizes unauthorized or accidental writes due to supply transients or control sequence violations. This layered defense model, further bolstered by hold-mode logic for concurrent SPI bus arbitration, equips designers to build multi-peripheral networks with minimal signal contention and operational hazards.

Endurance and retention metrics—1,000,000 erase/write cycles and 200+ years of data retention—position the device for deployment in both mission-critical systems and consumer-grade products where event logging is persistent and data must survive across product life cycles. These reliability characteristics are particularly valuable in distributed sensor deployments and industrial automation, where frequent memory rewrites coincide with long operational lifespans. In real-world integration scenarios, the explicit separation of data protection domains and clear write-cycle management simplify both device commissioning and fail-safe procedures, reducing the time demanded by validation and test cycles.

A subtle yet impactful design aspect is the deliberate balance of access speed, durability, and protection within a compact footprint, allowing migration between iterative prototype phases and volume production without significant hardware redesign. This versatility underpins a modular approach to embedded memory selection and future-proofs system architectures against lifecycle shocks and functional obsolescence.

Electrical characteristics of the 25LC160BT-I/ST

The 25LC160BT-I/ST integrates resilient electrical performance with a streamlined supply voltage range, accommodating both legacy 5V architectures and modern low-voltage systems at 2.5V. This versatility allows seamless deployment across generational hardware iterations without redesign overhead. Its EEPROM cell structure enables reliable non-volatile storage, with tight control over supply regulation ensuring consistent bit integrity even under variable loads.

Operating temperature stability, validated from -40°C to +85°C on standard variants and extending to +125°C in automotive grades, underpins suitability for harsh industrial and underhood environments. Material selection and package design minimize drift and leakage currents over the full thermal range, addressing common reliability concerns in remote or maintenance-free installations.

Active read currents scale proportionally to input voltage—6mA at 5.5V and 2.5mA at 2.5V—balancing performance demands with energy efficiency. This architecture facilitates extended polling cycles in energy-sensitive nodes, such as sensor endpoints or data loggers. Standby current, suppressed to 1μA, further empowers sleep-wake strategies in battery-driven platforms, enabling months to years of functional lifetime without external intervention.

Robust pin-level ESD tolerance (>4000V) mitigates risk from handling variances and transient field exposures, significantly reducing assembly failures in automated lines and field deployments. Compliance with RoHS standards ensures compatibility with global manufacturing processes, eliminating barriers in supply chain integration for large-scale, multi-region projects.

Consistent in-circuit testing validates reliable retention and functional margins even after repeated erase-write cycles, confirming suitability for frequent firmware updates or data collection tasks. Experience reveals that optimal power budgeting and board layout contribute significantly to real-world performance, especially in densely populated control architectures where voltage droop and signal integrity can impact storage access speeds.

Adopting devices with such robust characteristics not only supports current application demands but also future-proofs system designs against evolving requirements, streamlining both maintenance cycles and upgrade paths. Integrating the 25LC160BT-I/ST as part of a disciplined hardware selection strategy aligns component reliability with high-level system objectives, ultimately driving project scalability and long-term sustainability.

Timing and interface requirements for the 25LC160BT-I/ST

Timing and interface design for the 25LC160BT-I/ST converge around the efficient implementation of its SPI protocol and compliance with precise electrical specifications. The device employs a conventional SPI bus interface, utilizing dedicated pins—Chip Select (CS), Serial Clock (SCK), Serial Data In (SI), and Serial Data Out (SO)—along with Write-Protect (WP) and Hold functions. Each SPI transfer is initiated by asserting CS low, synchronizing subsequent bit shifts to SCK edges. The integrity of data transactions depends on meeting setup and hold times for CS and all data signals, with explicit values provided in the datasheet; deviations risk corrupted bits or unreliable operation.

Operating voltage directly influences interface performance and timing margins. At voltages in the 4.5–5.5V range, systems can reliably clock the SPI interface at up to 10MHz, enabling high-speed burst transfers. As voltage drops, both propagation delays and signal rise/fall times increase, necessitating lower clock speeds to maintain error-free transmission. At 2.5V, the maximum reliable SCK frequency is derated to 5MHz, and at 1.8V variants, further reduced to 3MHz; careful examination of individual part compatibility is essential. Voltage-dependent timing parameters must be rigorously factored into firmware and PCB design, especially for battery-powered or low-voltage designs, where margin for error narrows.

The chip offers robust sequential read and page-write operations. Address management is handled internally, with auto-increment and automatic wrap-around at the upper memory boundary. Systems requiring rapid block data access benefit from the device’s full-duplex SPI transfers, where input and output sequences run in parallel, optimizing transaction efficiency. Write operations require particular attention to the write cycle time—specified as a maximum of 5ms. This threshold determines bulk memory update rates; when planning for real-time or high-frequency logging, queuing and status-polling must be architected to avoid violating write cycle constraints, especially in designs sensitive to latency.

Additional interface management emerges in scenarios involving concurrent memory access or power stability concerns. When WP is active, accidental overwriting is blocked at the hardware level, a foundational feature for systems exposed to irregular resets or programmatic errors. The Hold pin proves advantageous for multi-master SPI topologies, allowing paused transactions without disturbing the bus or losing data context.

In practical integration, signal routing and impedance control on the PCB are paramount for preserving SPI timing integrity, especially when operating at higher clock rates or longer trace lengths. Ground bounce and signal crosstalk become tangible risks; matched impedance and controlled edge rates are recommended design countermeasures. In firmware, diligent polling of the chip’s Ready/Busy status avoids premature access and reinforces data integrity. Optimizing buffer sizes, transaction chunking, and adaptive clock scaling—particularly in energy-constrained applications—can maximize throughput without breaching device limitations.

Underlying these considerations is the central insight that robust operation with the 25LC160BT-I/ST demands a synchronous relationship between power supply design, interface timing, and control logic. Achieving tight adherence to all timing specifications in both software and hardware fosters deterministic, error-free memory interactions, which is critical in applications where system resilience and data accuracy are paramount.

Functional operation of the 25LC160BT-I/ST

The 25LC160BT-I/ST serial EEPROM is engineered around precise SPI protocol compliance, optimizing integration within resource-constrained embedded environments. Core device operation initiates with the master asserting the chip select (CS) line low, establishing a deterministic communication frame. Immediately afterward, an 8-bit instruction opcode—such as READ, WRITE, or WREN (Write Enable)—is shifted in, tightly sequencing command and data flow.

Write operations invoke an essential two-step mechanism: the write enable latch must first be explicitly set using the WREN instruction. This gating action, enforced by internal latches and write-protect circuitry, creates a robust safeguard against inadvertent memory modification in both noise-prone and mission-critical scenarios. Firmware reliability sharply increases by leveraging these built-in hardware interlocks, reducing the risk of errant writes during voltage transients or mis-sequenced SPI cycles.

The EEPROM’s page write capability illustrates the balance between throughput and simplicity; supporting up to 32 bytes per access, the controller handles byte sequencing and timing without imposing extra software complexity. However, the internal page address counter is non-linear across page boundaries. If write operations exceed a 32-byte boundary, data wraps within the current page, effectively overwriting its initial bytes. This behavior mandates precise buffer alignment in software drivers. Misaligned writes can silently corrupt data and complicate debug cycles—rigorous address management becomes a critical design consideration, particularly in high-rate data logging or parameter storage subsystems.

Signal ordering during data transmission—MSB out first, LSB last—ensures direct compatibility with standard SPI peripherals, minimizing the need for software-layer bit manipulation. In multi-device arrangements, the HOLD pin brings deterministic bus arbitration: asserting HOLD works as a synchronous pause on data transfers, enabling priority task preemption and clean task resumption. In tightly coupled systems where multiple SPI devices share a common bus, this reduces data corruption risk and bus contention, allowing for scalable architectures where EEPROM access is just one of many timing-sensitive operations.

Command coverage is comprehensive: aside from memory read and write, status register access and control instructions are available, offering granular insight and intervention in device state. This level of observability empowers developers to embed robust fault diagnostics and recovery procedures directly within the firmware flow, which supports maintainability long-term and accelerates root-cause analysis if faults are encountered.

A nuanced understanding of these low-level mechanisms reveals that real-world reliability derives not simply from the memory array itself, but from holistic SPI command discipline and correct exploit of on-chip protection features. Systems that internally validate status register bits following write sequences, for example, gain higher assurance against power failures and ensure that only intended operations reach nonvolatile memory. Consequently, careful attention to the interplay of functional sequences, internal protections, and interface nuances is essential for maximizing data integrity, throughput, and system resilience when deploying the 25LC160BT-I/ST in advanced embedded applications.

Package and physical characteristics of the 25LC160BT-I/ST

The 25LC160BT-I/ST utilizes an 8-lead TSSOP package, optimizing space with a 4.4mm body width and low-profile structure conducive to high-density PCB layouts. This compact form factor supports integration in designs where board real estate is at a premium, such as miniaturized sensor modules and IoT edge devices. The package’s lead-free, RoHS-compliant composition aligns with contemporary environmental and regulatory requirements, ensuring suitability for export-sensitive products without introducing compliance risks.

Pinout configuration follows established SPI memory conventions: chip select (CS), serial output (SO), serial input (SI), serial clock (SCK), supply voltages (Vcc, Vss), write protect (WP), and hold (HOLD). Each pin is precisely dimensioned and spaced for reliable mating with automated pick-and-place and reflow soldering equipment, facilitating flexible manufacturing flows and lowering the threshold for transitioning from prototyping to volume production. Compatibility with JEDEC standard soldering profiles further underscores robust thermal performance, enabling consistent yield rates even under aggressive thermal cycling or demanding process windows.

Mechanically, the TSSOP structure employs gull-wing leads that promote strong solder joints and manageable inspection under AOI systems. During rework scenarios, the exposed leads permit non-destructive repair with minimal stress to the PCB pads. Such considerations mitigate risk in high-value assemblies and support lean manufacturing strategies. The package’s encapsulation guards against moisture ingress and mechanical shock, preserving memory integrity in field deployments characterized by variable environmental conditions.

Pin signal integrity is maintained through careful substrate design and lead plating, circumventing crosstalk or parasitic capacitance—vital for applications requiring fast SPI clock rates or operating in electrically noisy environments. The arrangement embodies a balance of ease-of-routing for PCB designers and performance resilience, which is especially significant when scaling the design in multi-chip implementations or mixed-voltage domains. Procedural familiarity with the industry-standard pinout streamlines test fixture development and firmware ramp-up, reducing engineering cycle time.

This combination of standardized footprint, robust environmental compliance, and manufacturing-oriented mechanical detailing supports longevity within industrial, automotive, and consumer electronics cycles. Effective deployment hinges on leveraging the consistent assembly characteristics and modular SPI connectivity, enabling rapid product iteration. The TSSOP’s defined symmetry and labeling also streamline visual identification during production audits, fostering traceability and simplifying root cause analysis in quality assurance workflows.

Across diverse scenarios, the 25LC160BT-I/ST’s package philosophy enables not just technical compatibility, but an operational advantage—accelerating time-to-market through predictable handling and integration while maintaining reliability at scale.

Application scenarios for the 25LC160BT-I/ST

The 25LC160BT-I/ST addresses critical requirements for non-volatile memory within embedded system architectures, delivering robust data integrity across a broad application spectrum. Its SPI interface simplifies integration with a wide range of microcontrollers, facilitating firmware data management and parameter retention without introducing significant latency or bus complexity. In microcontroller-centric platforms, this memory enables compact, energy-efficient retention of firmware revisions, factory settings, device calibration values, and security keys, ensuring persistent storage through power cycles or unexpected resets.

In industrial and automotive environments, the 25LC160BT-I/ST demonstrates resilience under extended temperature extremes, aligning with demanding thermal operational envelopes. Its high endurance rating supports frequent data overwrites, a key advantage in data logging or event-tracking implementations where operational histories or fault logs are continuously updated during system use. The ESD and write protection features further safeguard critical process parameters, providing a stable repository for regulatory or diagnostic data necessary over long service cycles.

Battery-powered systems, such as portable instruments or remote sensor nodes, require minimal standby current and robust endurance to guarantee long-term parameter retention and runtime settings preservation. The low-power characteristics of the 25LC160BT-I/ST optimize system longevity, while the non-volatility ensures immediate resumption of user-set conditions after power restoration. Combined with its compact footprint, this memory solution supports sleek form factors common in consumer electronics.

Real-world integration frequently spotlights the versatility of the 25LC160BT-I/ST in scenarios demanding both secure and persistent data. An effective pattern involves leveraging its endurance and extended temperature tolerance for rapidly reprogrammable lookup tables in process-control applications, or for encryption key storage in access-controlled devices. The device’s architecture also reveals an efficient balance between fast write cycles and long-term data retention, a nuanced tradeoff that enables reliable operation without storage medium degradation.

A core insight emerges: the 25LC160BT-I/ST embodies a nuanced convergence of endurance, reliability, and straightforward interoperability, making it an optimal choice where operational stability must be maintained across repeated reprogramming and fluctuating environmental conditions. This versatility underscores its relevance in contemporary and emerging embedded applications demanding non-volatile memory with both immediate and enduring reliability.

Potential equivalent/replacement models for the 25LC160BT-I/ST

Evaluating alternate serial EEPROMs to the 25LC160BT-I/ST entails a rigorous comparison of electrical, functional, and architectural parameters, with particular attention paid to supply voltage compatibility, page buffer sizes, and device instruction sets. In Microchip's portfolio, model 25LC160A delivers the same 16Kbit density, but its 16-byte page size directly impacts write throughput and flash management strategies within embedded subsystems. When the application prioritizes fast bulk writes or frequent partial page updates, mismatched buffer lengths may require firmware adaptation or recalibration of memory utilization algorithms.

The 25AA160B introduces expanded operational flexibility through a supply voltage range descending to 1.8V, coupled with a 32-byte page buffer. This configuration aligns well with battery-powered nodes and low-voltage rail architectures, commonly seen in IoT edge hardware or wearable sensors. Such characteristics not only ensure compatibility in ultra-low power environments but also facilitate extended device longevity under aggressive power management regimes. The larger buffer can optimize transaction efficiency, though firmware routines may need revision to leverage full-page writes, especially in high-speed SPI communication scenarios.

For applications requiring scalable voltage options without sacrificing drop-in simplicity, the 25AA160A spans the 1.8V to 5.5V spectrum while retaining the 16-byte page size found in the original model. Systems supporting both legacy and next-generation boards benefit from this voltage tolerance, streamlining component standardization and field repair logistics.

The nuances between these models extend beyond superficial electrical specifications, influencing PCB layout constraints (due to package compatibility), factory programming flows, and diagnostic self-test protocols. The interplay between page buffer size and supply voltage support reveals key decision nodes: larger buffers enhance burst-write efficiency, while broader voltage support future-proofs multi-generation design platforms. In practice, seamless migration depends on deep cross-referencing of timing diagrams, endurance ratings, and addressing schemes against both datasheets and real-world operation under variance in temperature and input ripple.

A layered selection strategy balances immediate electrical compatibility with longer-term system reliability and maintainability. The ideal replacement model is often dictated not by a single parameter, but by a composite assessment informed by circuit behavior under edge cases, firmware flexibility, and total cost of ownership. Robust product qualification workflows routinely simulate worst-case write-to-read latency and noise susceptibility for each candidate device, exposing latent differences that only become apparent during extended field usage or under harsh operating conditions. Incorporating this granularity into the component selection process distinguishes high-reliability system engineering from commodity design approaches.

Conclusion

The Microchip 25LC160BT-I/ST exemplifies a robust and flexible non-volatile memory solution, tailored for deployment across demanding embedded contexts. Centered on a 16Kbit serial peripheral interface (SPI) EEPROM architecture, the device integrates high data retention with rapid, programmable data access while safeguarding contents via advanced write-protect protocols. At the hardware level, the SPI bus streamlines integration with microcontrollers and programmable logic, enabling straightforward command sequencing for efficient read/write operations. The instruction set is crafted to support granular control, including byte-level data manipulation and sector-limited write cycles, facilitating secure firmware updates or configuration archiving without excessive wear overhead.

Industrial-grade reliability is engineered not only through silicon-level endurance but also with attention to supply stability and compatibility. The standard SOIC packaging fits directly into reflow-compatible assembly lines, ensuring seamless manufacturing transitions for scale and legacy board upgrades. In practice, systems benefiting from extended temperature tolerance and operational integrity have harnessed this EEPROM in control modules, sensor logging, and boot parameter storage. Bulk purchases are simplified through device pinout and performance harmonization with close equivalents, such as other parts within the 25LC/256 family, optimizing sourcing flexibility and multi-vendor qualification strategies.

Attention to data protection is manifest in both software and hardware lock mechanisms, reducing risk of inadvertent overwrites during remote firmware pushes or field updates. Deployments often leverage partial sector protection strategies to enable selective modification, balancing security with system adaptability. From a design optimization perspective, utilizing power-down features and tuning read/write frequencies maximizes overall system longevity, especially in battery-powered or mission-critical installations. The intersection of feature depth and reliability positions this EEPROM line as a nuanced choice: compatibility with established SPI standards ensures rapid prototyping, while granular command control supports secure data compartmentalization.

In the evolving landscape of embedded memory selection, prioritizing established components such as the 25LC160BT-I/ST mitigates long-term obsolescence risks and streamlines design validation cycles. The synthesis of performance consistency, security layers, and scalable operational modes enables tightly integrated architectures, aligning with stringent industrial requirements and accelerating development workflows for next-generation control hardware.

View More expand-more

Catalog

1. Product overview of the Microchip 25LC160BT-I/ST2. Key features of the 25LC160BT-I/ST3. Electrical characteristics of the 25LC160BT-I/ST4. Timing and interface requirements for the 25LC160BT-I/ST5. Functional operation of the 25LC160BT-I/ST6. Package and physical characteristics of the 25LC160BT-I/ST7. Application scenarios for the 25LC160BT-I/ST8. Potential equivalent/replacement models for the 25LC160BT-I/ST9. Conclusion

Reviews

5.0/5.0-(Show up to 5 Ratings)
ユズ***記憶
грудня 02, 2025
5.0
ディジエレクトロニクスの発送は本当に迅速で驚きました。迅速な対応に感謝しています。
Bree***ibes
грудня 02, 2025
5.0
The store offers great prices without compromising on quality, which I appreciate.
Mist***adow
грудня 02, 2025
5.0
Consistently impressed by the quick turnaround and superior product standards.
Shi***nYou
грудня 02, 2025
5.0
I highly recommend DiGi Electronics for their reliable stock and customer-first approach.
Cherr***ossom
грудня 02, 2025
5.0
Their support team provides detailed assistance that makes solving issues simple.
Celes***lVibes
грудня 02, 2025
5.0
Their products have resilience built into them, plus delivery that’s consistently prompt.
Sta***aser
грудня 02, 2025
5.0
Prices are transparent and fair, no hidden costs, which I appreciate greatly.
Publish Evalution
* Product Rating
(Normal/Preferably/Outstanding, default 5 stars)
* Evalution Message
Please enter your review message.
Please post honest comments and do not post ilegal comments.

Frequently Asked Questions (FAQ)

What are the main features of the 25LC160BT-I/ST EEPROM memory chip?

The 25LC160BT-I/ST is a non-volatile 16Kbit EEPROM with an SPI interface, operating at up to 10 MHz, suitable for data storage in various electronic devices. It supports voltage ranges from 2.5V to 5.5V and has a compact 8-TSSOP package, making it ideal for surface-mount applications.

Is the 25LC160BT-I/ST compatible with common microcontrollers?

Yes, the 25LC160BT-I/ST uses an SPI interface, which is widely supported by most microcontrollers and development platforms, ensuring easy integration into your projects.

What are the typical uses and applications for this EEPROM memory chip?

This EEPROM is commonly used for storing configuration data, calibration parameters, or small datasets in embedded systems, IoT devices, and consumer electronics due to its reliability and low power consumption.

What is the operating temperature range of the 25LC160BT-I/ST?

The chip can operate reliably within a temperature range of -40°C to 85°C, making it suitable for both industrial and consumer applications with diverse environmental conditions.

What warranty and support options are available after purchasing the 25LC160BT-I/ST EEPROM?

The 25LC160BT-I/ST is sold as a new, original product with manufacturer support. It is RoHS3 compliant, and customer service options may include technical support and warranty through authorized distributors or suppliers.

Quality Assurance (QC)

DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.

Quality Assurance
Counterfeit and defect prevention

Counterfeit and defect prevention

Comprehensive screening to identify counterfeit, refurbished, or defective components, ensuring only authentic and compliant parts are delivered.

Visual and packaging inspection

Visual and packaging inspection

Electrical performance verification

Verification of component appearance, markings, date codes, packaging integrity, and label consistency to ensure traceability and conformity.

Life and reliability evaluation

DiGi Certification
Blogs & Posts
25LC160BT-I/ST CAD Models
productDetail
Please log in first.
No account yet? Register