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24AA64T-I/MC
Microchip Technology
IC EEPROM 64KBIT I2C 400KHZ 8DFN
2512 Pcs New Original In Stock
EEPROM Memory IC 64Kbit I2C 400 kHz 900 ns 8-DFN (2x3)
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24AA64T-I/MC Microchip Technology
5.0 / 5.0 - (250 Ratings)

24AA64T-I/MC

Product Overview

1229973

DiGi Electronics Part Number

24AA64T-I/MC-DG
24AA64T-I/MC

Description

IC EEPROM 64KBIT I2C 400KHZ 8DFN

Inventory

2512 Pcs New Original In Stock
EEPROM Memory IC 64Kbit I2C 400 kHz 900 ns 8-DFN (2x3)
Memory
Quantity
Minimum 1

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In Stock (All prices are in USD)
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  • 1 5.5611 5.5611
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24AA64T-I/MC Technical Specifications

Category Memory, Memory

Manufacturer Microchip Technology

Packaging Cut Tape (CT) & Digi-Reel®

Series -

Product Status Active

DiGi-Electronics Programmable Verified

Memory Type Non-Volatile

Memory Format EEPROM

Technology EEPROM

Memory Size 64Kbit

Memory Organization 8K x 8

Memory Interface I2C

Clock Frequency 400 kHz

Write Cycle Time - Word, Page 5ms

Access Time 900 ns

Voltage - Supply 1.7V ~ 5.5V

Operating Temperature -40°C ~ 85°C (TA)

Mounting Type Surface Mount

Package / Case 8-VFDFN Exposed Pad

Supplier Device Package 8-DFN (2x3)

Base Product Number 24AA64

Datasheet & Documents

HTML Datasheet

24AA64T-I/MC-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051

Additional Information

Other Names
24AA64T-I/MCCT
24AA64TIMC
24AA64T-I/MCTR
24AA64T-I/MCDKR
Standard Package
3,300

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QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
M24C64-FMB6TG
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1983
M24C64-FMB6TG-DG
0.0556
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14041
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24FC64-I/MC
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Reviews

5.0/5.0-(Show up to 5 Ratings)
Kurv***önig
грудня 02, 2025
5.0
Hochwertige Verpackung und exakte Logistikverfolgung – entspricht meinen Erwartungen.
QuietF***stHaven
грудня 02, 2025
5.0
They provide excellent customer satisfaction through quality and value.
Morn***Glory
грудня 02, 2025
5.0
The care put into their packaging demonstrates their customer-first approach.
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Frequently Asked Questions (FAQ)

What are the key design-in risks when using the 24AA64T-I/MC in a mixed-voltage system operating at 3.3V and 5V logic levels?

The 24AA64T-I/MC supports a wide supply voltage range (1.7V to 5.5V), making it suitable for both 3.3V and 5V systems. However, a critical design-in risk is ensuring signal level compatibility with I2C bus partners. If the 24AA64T-I/MC is powered at 3.3V but connected to a 5V microcontroller, the GPIO pins are not 5V tolerant, risking damage or unreliable communication. Use I2C level translators like the PCA9306 or NXP TXB0108 to safely bridge voltage domains. Also verify pull-up resistor values on SDA and SCL lines—too low a resistance can exceed the pin current limits, especially at higher voltages. Designers should simulate bus loading and account for capacitance to maintain signal integrity across the 400 kHz I2C interface in mixed-signal environments.

How does the 24AA64T-I/MC compare to the M24C64-DFMC6TG in terms of reliability and long-term availability for industrial designs?

The 24AA64T-I/MC from Microchip and the M24C64-DFMC6TG from STMicroelectronics both offer 64Kbit I2C EEPROMs in small DFN packages, but there are key reliability and sourcing differences. The 24AA64T-I/MC has a moisture sensitivity level (MSL) of 1 (unlimited floor life), which simplifies assembly and rework—critical for high-reliability industrial designs. ST’s M24C64-DFMC6TG is MSL2, requiring controlled storage and baking if exposed. Microchip also tends to have longer product lifecycle support compared to some alternatives. For designs targeting deployment over 10+ years, the 24AA64T-I/MC offers stronger long-term availability due to Microchip’s stable supply chain and broader second-source flexibility, especially where obsolescence risk is a concern.

Can the 24AA64T-I/MC be used as a direct drop-in replacement for the 24FC64-I/MC, and what are the potential pitfalls?

While the 24AA64T-I/MC and 24FC64-I/MC are both 64Kbit I2C EEPROMs in 8-DFN packages and share pin-to-pin compatibility, they differ in write timing and endurance. The 24AA64T-I/MC has a typical write cycle time of 5ms and 1 million write cycles, while the 24FC64-I/MC supports faster byte writes and up to 10 million endurance cycles. Replacing the 24FC64 with the 24AA64T-I/MC may introduce timing risks if the host microcontroller does not poll for acknowledgment after a write (ACK polling). Additionally, systems relying on frequent small writes may experience premature wear if not adjusted. Always update the write-delay routine in firmware and evaluate wear-leveling if the 24AA64T-I/MC is used in high-write applications originally designed for the 24FC64-I/MC.

What thermal considerations should be addressed when placing the 8-DFN (2x3) 24AA64T-I/MC in a dense PCB layout?

The 8-DFN (2x3) package of the 24AA64T-I/MC has an exposed thermal pad requiring proper PCB copper land design for thermal dissipation and mechanical stability. In dense layouts, insufficient copper around the thermal pad can lead to poor solder joints and localized overheating during write cycles, despite low power consumption. To mitigate this, ensure the PCB footprint includes an adequate thermal relief connected to a ground plane, following Microchip’s recommended land pattern. Avoid placing the 24AA64T-I/MC under large ICs or heat-generating components. Also ensure reflow profile complies with the MSL1 rating to avoid 'tombstoning' or voiding—use balanced thermal pads and precise stencil aperture design (typically 0.24mm thickness with 75% area coverage on the thermal pad).

What are the failure modes of the 24AA64T-I/MC under repeated write cycles, and how can design practices extend its lifespan?

The 24AA64T-I/MC is rated for 1 million write/erase cycles, but failure typically occurs due to EEPROM cell oxide degradation from frequent writes without proper management. Critical failure modes include bit errors, corruption during power-down, and reduced data retention. To extend lifespan, minimize unnecessary writes by buffering changes in volatile memory and using write coalescing. Implement wear-leveling logic for data structures that update often (e.g., counters or logs). Always ensure stable power during write operations—use a brown-out detection circuit or small backup capacitor to prevent mid-write failures. Also, leverage the device’s 900 ns access time and ACK polling to confirm write completion, reducing retry attempts. These practices ensure robust operation in long-life applications such as medical devices or industrial sensors.

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