MSS30-142-E28 >
MSS30-142-E28
MACOM Technology Solutions
SCHOTTKY DIODE,BEAMLEAD, E28-S
6469 Pcs New Original In Stock
RF Diode Schottky - Single 2V 50 mA 100 mW E28
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MSS30-142-E28 MACOM Technology Solutions
5.0 / 5.0 - (128 Ratings)

MSS30-142-E28

Product Overview

9358737

DiGi Electronics Part Number

MSS30-142-E28-DG
MSS30-142-E28

Description

SCHOTTKY DIODE,BEAMLEAD, E28-S

Inventory

6469 Pcs New Original In Stock
RF Diode Schottky - Single 2V 50 mA 100 mW E28
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 46.4195 46.4195
  • 200 17.9644 3592.8800
  • 500 17.3322 8666.1000
  • 1000 17.0211 17021.1000
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MSS30-142-E28 Technical Specifications

Category Diodes, RF Diodes

Packaging -

Series MSS30-xxx-x

Product Status Active

Diode Type Schottky - Single

Voltage - Peak Reverse (Max) 2V

Current - Max 50 mA

Capacitance @ Vr, F 0.26pF @ 0V, 1MHz

Resistance @ If, F 13Ohm @ 5mA, 1MHz

Power Dissipation (Max) 100 mW

Operating Temperature -65°C ~ 150°C

Package / Case E28

Supplier Device Package E28

Base Product Number MSS30

Datasheet & Documents

HTML Datasheet

MSS30-142-E28-DG

Environmental & Export Classification

Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0060

Additional Information

Other Names
1465-MSS30-142-E28
Standard Package
25

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
MSS30-154-E28
MACOM Technology Solutions
1845
MSS30-154-E28-DG
7.9065
Parametric Equivalent

Reviews

5.0/5.0-(Show up to 5 Ratings)
Plac***ines
грудня 02, 2025
5.0
DiGi Electronics maintains high standards of reliability that we can trust implicitly.
Mea***Lark
грудня 02, 2025
5.0
DiG i Electronics consistently provides excellent value.
Sil***Star
грудня 02, 2025
5.0
This item has proven to be highly resistant to wear and tear over months of use.
Brigh***arpath
грудня 02, 2025
5.0
Rapid shipping from DiGi Electronics means I can test and integrate new gear into my setup almost immediately.
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Frequently Asked Questions (FAQ)

What are the key design-in considerations when using the MSS30-142-E28 in a high-frequency mixer circuit operating above 30 GHz?

When integrating the MSS30-142-E28 into high-frequency mixer designs above 30 GHz, prioritize minimizing parasitic inductance and capacitance in the PCB layout. Use symmetric beamlead mounting with short, matched RF traces to preserve signal integrity. Given its 0.26pF capacitance at 0V, ensure bias networks are tightly decoupled to prevent interaction with RF paths. Due to its 13Ω series resistance at 5mA, operate within 1–10 mA forward current for optimal conversion efficiency and linearity. Thermal management is critical in enclosed assemblies—despite the 100 mW power dissipation limit, derate above 100°C ambient to ensure reliability in extended operating conditions.

Can the MSS30-142-E28 replace the Skyworks SMS7621-078 in a low-power detector application, and what performance trade-offs should be expected?

The MSS30-142-E28 can substitute the Skyworks SMS7621-078 in low-power RF detection below 20 GHz, but with important trade-offs. The MSS30-142-E28 has a lower reverse breakdown voltage (2V vs. 5V) and higher series resistance (13Ω vs. ~6Ω), which may reduce sensitivity and dynamic range in weak signal environments. However, it offers superior thermal stability up to 150°C and better moisture resistance (MSL 1), making it more reliable in harsh environments. Ensure input power stays below -10 dBm to prevent forward conduction risks due to lower current handling (50 mA max). Use calibrated offset correction in signal processing to account for voltage drop differences.

How does the low reverse breakdown voltage of the MSS30-142-E28 impact protection circuit requirements in transmitter front-end designs?

The 2V peak reverse voltage rating of the MSS30-142-E28 makes it highly susceptible to damage from transient RF leakage or mismatches in transmitter coupling paths. In such applications, always include external DC blocking capacitors and use RF limiters or PIN diodes upstream to clamp voltage excursions. Avoid direct coupling to power amplifier outputs unless attenuation of at least 20 dB is present. Simulate worst-case VSWR scenarios to ensure reflected power doesn’t exceed the 50 mA forward or 2V reverse limits. Consider this diode only in receive-side or isolated monitoring paths unless robust isolation circuits are implemented.

What are the reliability risks of operating the MSS30-142-E28 near its maximum junction temperature in a sealed aerospace enclosure?

Operating the MSS30-142-E28 near its 150°C maximum junction temperature in sealed aerospace systems increases long-term degradation risks due to thermal stress on beamlead bonds and die adhesion. Though rated for -65°C to 150°C and MSL 1, sustained operation above 125°C accelerates electromigration and increases reverse leakage. To mitigate risks, ensure PCB thermal vias distribute heat effectively, avoid stacking heat-generating components nearby, and perform HALT testing to validate life expectancy. Additionally, derate forward current to ≤40 mA and monitor internal temperature via environmental modeling, especially in lunar or high-orbit missions with extreme thermal cycling.

How does the capacitance variation with bias affect modulation accuracy when using the MSS30-142-E28 in a variable attenuator network?

The MSS30-142-E28 exhibits bias-dependent capacitance, starting at 0.26pF at 0V and decreasing with reverse bias—though limited by its 2V max rating. In variable attenuator designs, this creates non-linear phase and amplitude response, especially above 10 GHz. To maintain modulation accuracy, operate the diode in forward conduction mode with tightly regulated bias currents between 1–5 mA. Use complementary pairs or temperature-compensated drivers to cancel drift. Characterize C-V curves in-circuit across temperature (-40°C to +85°C) and pre-distort control signals to linearize RF response. Avoid using it in reflective topologies due to low reverse voltage tolerance.

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