CY7C2165KV18-550BZC >
CY7C2165KV18-550BZC
Infineon Technologies
IC SRAM 18MBIT PAR 165FBGA
1420 Pcs New Original In Stock
SRAM - Synchronous, QDR II+ Memory IC 18Mbit Parallel 550 MHz 165-FBGA (13x15)
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CY7C2165KV18-550BZC Infineon Technologies
5.0 / 5.0 - (307 Ratings)

CY7C2165KV18-550BZC

Product Overview

6326173

DiGi Electronics Part Number

CY7C2165KV18-550BZC-DG
CY7C2165KV18-550BZC

Description

IC SRAM 18MBIT PAR 165FBGA

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1420 Pcs New Original In Stock
SRAM - Synchronous, QDR II+ Memory IC 18Mbit Parallel 550 MHz 165-FBGA (13x15)
Memory
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Minimum 1

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CY7C2165KV18-550BZC Technical Specifications

Category Memory, Memory

Manufacturer Infineon Technologies

Packaging Tray

Series -

Product Status Active

DiGi-Electronics Programmable Not Verified

Memory Type Volatile

Memory Format SRAM

Technology SRAM - Synchronous, QDR II+

Memory Size 18Mbit

Memory Organization 512K x 36

Memory Interface Parallel

Clock Frequency 550 MHz

Write Cycle Time - Word, Page -

Voltage - Supply 1.7V ~ 1.9V

Operating Temperature 0°C ~ 70°C (TA)

Mounting Type Surface Mount

Package / Case 165-LBGA

Supplier Device Package 165-FBGA (13x15)

Base Product Number CY7C2165

Datasheet & Documents

Environmental & Export Classification

RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041

Additional Information

Other Names
-CY7C2165KV18-550BZC
2156-CY7C2165KV18-550BZC
CYPCYPCY7C2165KV18-550BZC
2832-CY7C2165KV18-550BZC
CY7C2165KV18550BZC
SP005661377
Standard Package
272

Evaluating the CY7C2165KV18-550BZC QDR II+ SRAM: High-Bandwidth Memory Solutions from Infineon Technologies

Product Overview: CY7C2165KV18-550BZC QDR II+ SRAM

The CY7C2165KV18-550BZC QDR II+ SRAM delivers an advanced memory architecture purpose-built for high-demand environments requiring exceptional bandwidth and low latency. By leveraging a 512K × 36-bit organization within an 18 Mbit array, the device optimizes storage density and throughput, crucial for scalable system designs targeting switches, routers, and data aggregation modules. Its Fine Ball Grid Array (FBGA) packaging, composed of 165 balls, ensures robust signal integrity and enables efficient thermal dissipation, essential under sustained peak operation.

At its core, QDR II+ technology implements true concurrent read/write cycles through distinct data and address ports for input and output operations. This separation eliminates bus contention and maximizes simultaneous data transfers, directly impacting system-level throughput. The 550 MHz clock speed translates to multi-gigabit per second bandwidths, permitting seamless accommodation of escalating data rates in modern network architectures. In practical switching and routing applications, this enables line-rate packet buffering without bottlenecks, ensuring zero-loss environments even under distributed denial-of-service (DDoS) conditions or fluctuating traffic patterns.

Underlying the high-speed performance is a synchronous interface, tightly aligning input and output control with system clock regimes. Designers achieve deterministic access latency, which is pivotal for timing-sensitive tasks like rapid lookup or transaction processing in communication ASICs and network processors. Consistent cycle timing simplifies timing closure during board-level integration, reducing the need for extensive design iteration. Reliability is further reinforced by advanced built-in test features and error mitigation mechanisms, which streamline production-level qualification and long-term deployment.

From a deployment perspective, the device’s concurrent port structure naturally suits dual-ported cache architectures, where simultaneous update and retrieval enhance CPU/memory parallelism. This direct mapping to application-level concurrency is evident in real-world usage: for instance, in telecommunication base stations, near-instant access to multi-channel status tables reduces call setup latency and optimizes user experience. Similar mechanisms are applied in video streaming platforms for buffer management, where high-speed concurrent access delivers consistent playback quality even under heavy load.

A nuanced evaluation reveals that optimal system integration stems not solely from raw speed or density, but from predictable behavior under sustained stress. Signal trace constraints, impedance matching around FBGA interfaces, and careful PCB stackup selection are crucial to maintaining the promised bandwidth at scale. Deployments benefit from exhaustively validated layout and simulation, confirming that the theoretical concurrency translates to actionable performance in the final product. In this context, the prioritization of deterministic read/write synchronization emerges as a core differentiator, frequently tipping the balance in favor of QDR II+ solutions for mission-critical infrastructure.

In summary, the CY7C2165KV18-550BZC represents an engineered response to the confluence of bandwidth demand, latency sensitivity, and concurrent data access. Its architectural choices position it as an enabler of next-generation networking and data-processing systems, where guaranteed speed and predictability define competitive advantage.

Core Architecture and Functional Features of CY7C2165KV18-550BZC

The CY7C2165KV18-550BZC utilizes the advanced QDR II+ architecture, characterized by fully independent read and write ports. The physical separation of these data paths underpins simultaneous operations, removing bottlenecks associated with data bus “turnaround” delays. This design sharply reduces wait cycles inherent in conventional shared-bus SRAMs, enabling cleaner system timing and maximizing throughput. Dual-port configuration facilitates double data rate (DDR) transfers per port, reaching up to 1100 Mbps per pin at 550 MHz. The architecture supports high-speed data flows essential in demanding networking and data acquisition environments.

Integrating four-word burst transfers on every transaction minimizes address bus toggling and relieves the controller from frequent address multiplexing chores. Each address issued triggers a prefetch of four contiguous 36-bit words, optimizing memory bandwidth for sequential streaming workloads as well as random-access bursts required by packet buffering or lookup table scenarios. This burst access model reduces traffic on the address bus and lowers system power dissipation, especially in high-density designs where address contention is prevalent. Notably, address bus multiplexing and individual latching streamline integration with complex memory hierarchies, ensuring robust address delivery even in noisy electromagnetic environments.

Flexible read latency, with selectable operation modes—QDR II+ (2.5 cycles) or QDR I compatible (1.0 cycle)—provides designers with the tools to fit diverse timing and protocol requirements. In layered memory subsystems, this configurability supports mixed-mode designs while avoiding pipeline stalls. The device’s native data coherency guarantees that reads always reflect the freshest data, attained through internal forwarding logic that dynamically resolves hazards when write-then-read operations target identical addresses. This mechanism is crucial for maintaining deterministic behavior, serving low-latency network routers or high-frequency trading platforms requiring always-current information.

Additional engineering-focused attributes include synchronous self-timed write mechanisms which internally coordinate data placement, eliminating external strobe complexities and lowering design overhead for timing closure. The integrated PLL synchronizes internal sequences, delivering precise clock alignment and data setup/hold margins—beneficial in PCB layouts subject to skew and jitter. On-die termination (ODT) offers inherent impedance matching, reducing reflection-related errors and absolving engineers from specifying external termination networks. This feature simplifies board design, condenses component counts, and directly impacts high-speed signal integrity, a recurring concern in dense multi-drop topologies found in modern switching fabrics.

Practical deployment repeatedly demonstrates that the combination of independent port operation and burst architecture mitigates latency spikes when servicing multiple asynchronous data streams. In scaling memory depth, port-select expansions are handled cleanly through dedicated controls, affording seamless horizontal scaling. This structure adapts well to environments with fluctuating load and parallel access demands, such as cache subsystems or real-time sensor fusion tasks. Moreover, the device’s coherent data forwarding refines overall system predictability, ensuring that downstream computation modules receive correct data without pipeline stalls.

In practical terms, the CY7C2165KV18-550BZC’s tightly engineered features reflect a trend toward hardware architectures that prioritize deterministic high-throughput communication and simplified timing closure. Its design illustrates the productive intersection of protocol flexibility, physical-layer robustness, and application-level efficiency, setting a benchmark for performance-centric SRAM deployments in today’s intensive data environments.

Interface, Pinout, and Packaging Specifications of CY7C2165KV18-550BZC

The CY7C2165KV18-550BZC utilizes a finely engineered 165-ball FBGA package (13 × 15 × 1.4 mm), which effectively balances the need for high signal integrity, limited board footprint, and robust mechanical reliability. The package design minimizes parasitic capacitance and inductance, supporting sustained high-speed data transfer rates essential for performance-centric embedded applications. Careful ball-grid array placement provides optimized routing pathways, assisting multi-layer PCB designs to handle signal and power integrity challenges under dense layout constraints.

At the interface level, the device employs disjointed data input (D[x:0]) and output (Q[x:0]) buses, ensuring zero wait-state true dual-port functionality. This separation enables simultaneous read and write transactions, which is critical in bandwidth-intensive domains such as high-speed networking switches, advanced caching, and real-time signal processing pipelines. Implementing independent input clocks (K and K̅) for synchronization enhances protocol flexibility, allowing the device to integrate seamlessly with a variety of master controllers while maintaining timing robustness against clock skew and jitter.

The data capture mechanism leverages echo clock signals (CQ/CQ̅) and a dedicated valid data indicator (QVLD), minimizing the latency between data generation and reception. The use of echo clocks provides a direct reference for reading data, allowing system designers to close timing budgets in high-frequency domains efficiently. Byte-write select and control signal granularity deliver precise access control at the sub-word level, essential for optimizing memory throughput and energy profile when only partial data updates are required.

On-die termination (ODT) parameters are exposed through dedicated balls and are user-programmable at power-up. By integrating this capability, the device streamlines impedance matching to PCB traces, reducing reflection errors over high-speed links without external termination resistors scattered around the layout—an approach that both simplifies board design and enhances system electromagnetic compatibility.

Output impedance calibration is managed through an external precision resistor (RQ) on the ZQ pin. The device senses this reference and adjusts driver strengths in real time, self-adapting to voltage, temperature, and manufacturing variations, thereby upholding output signal quality across operational extremes. In demanding deployments, this closed-loop calibration mechanism has repeatedly demonstrated its capability to extend system reliability and maximize valid timing margins, especially when integrating across disparate vendor platforms or during marginal redesigns.

Optimally exploiting the CY7C2165KV18-550BZC's interface architecture, advanced systems can leverage its concurrent dual-port access and robust impedance adaptation to reduce bottlenecks in data flow, allowing for innovative topologies such as multi-bus cache coherency bridges and deterministic packet processing. The cumulative effect of these packaging and interface choices is evident in reduced debug effort and predictable timing closure during system bring-up, directly impacting project schedules and delivering measurable gains in deployment agility.

Deepening implementation insight, attention should be given to careful trace length matching on critical clocks and data signals, and impedance control around the ZQ and ODT pins. Practical experience reveals that optimizing these details in layout and firmware initialization yields enhanced setup/hold margins, a critical metric in achieving error-free operation at rated clock speeds.

Through a holistic integration of package, interface, and adaptive calibration mechanisms, the CY7C2165KV18-550BZC exemplifies a platform that enables high-performance and reliable operation within the stringent constraints of modern embedded design environments. This architecture provides a foundation for scalable and efficient solutions in fast-evolving application spaces demanding both speed and integrity.

Operating Modes and Advanced Functionalities of CY7C2165KV18-550BZC

The CY7C2165KV18-550BZC operates on the Quad Data Rate II+ (QDR II+) protocol, leveraging a 2.5-cycle read latency while utilizing dual DDR ports for simultaneous data throughput. This architecture is optimized for high-frequency data traffic where minimizing access conflict and maximizing bandwidth are paramount. The protocol’s distinct separation of read and write clocks not only streamlines controller logic but also mitigates data contention, allowing for deterministic timing critical in applications such as high-speed networking or packet buffering.

Transitioning the device into QDR I mode, activated by asserting the DOFF pin LOW, yields a reduced single-cycle read latency and disables the integrated phase-locked loop (PLL). This modification slashes synchronization overhead, suiting deterministic low-latency systems where timing flexibility supersedes the need for extensive clock management. The hardware’s ability to switch between latency-optimized and frequency-adaptive modes underscores its adaptability in multi-role architectures, from core routers requiring microsecond responsiveness to compute accelerators balancing throughput and timing margins.

Byte-level granularity in write operations is facilitated by the BWS[x:0] select lines, which empower selective data updates at the byte level. This fine control proves indispensable for advanced cache architectures, transactional memory systems, and partial register updates, where unnecessary data overwrite can result in performance penalties or data hazards. Real-world deployments have shown that such granular data control directly translates into reduced bus contention and more efficient data coherency protocols, especially in tightly coupled multicore environments.

Independent read and write ports, supported by an internal arbitration mechanism, eliminate stalling commonly encountered in single-ported or banked designs. By providing non-blocking concurrent access, the implementation ensures deterministic memory response even under sustained, asynchronous traffic patterns. Within switching fabrics and parallel compute engines, this concurrency directly alleviates resource starvation and simplifies firmware design, as arbitration is managed at the hardware layer rather than relying on complex software-based scheduling.

Signal integrity, a critical concern at the multi-gigabit speeds supported by the device, is addressed through integrated on-die termination (ODT). By embedding precision termination resistors and referencing an external RQ pin, the design not only reduces reflections but also relaxes constraints on PCB trace routing. This directly impacts board-level engineering, where elimination of external termination increases reliability and accelerates system validation cycles. Such integration is particularly advantageous for densely populated PCBs and high-speed backplanes, where routing congestion and crosstalk are persistent design bottlenecks.

The PLL engine accommodates operating frequencies as low as 120 MHz, with robust lock and relock capabilities ensuring that functional continuity is maintained across a wide spectrum of application profiles. In scenarios involving dynamic frequency scaling, such as adaptive networking hardware or energy-aware compute blocks, the PLL’s agility eliminates performance cliffs that might otherwise compromise service-level guarantees.

Data capture is further enhanced by echo clock and QVLD signaling. These dedicated output timing references address the increasing challenge of skew management at advanced signaling rates. By decoupling data and control path timing, the device streamlines high-speed interface design, allowing for straightforward timing closure even in systems employing long trace lengths or variable PCB stackups. Experience in complex system integration reveals that echo clocks and valid-data cues can significantly accelerate bring-up and reduce debug cycles, as timing margins become explicit and less susceptible to environmental variations.

Tightly integrating these mechanisms, the CY7C2165KV18-550BZC embodies a memory subsystem model that prioritizes both speed and configurability. Its advanced protocol support, granular control, and signal conditioning provide an effective foundation for high-performance, low-latency systems demanding both robustness and adaptability across variable deployment contexts.

Power-Up Sequence and Design Considerations for CY7C2165KV18-550BZC

Ensuring robust initialization of the CY7C2165KV18-550BZC demands rigorous management of the power-up sequence and its interrelated design variables. The device architecture requires that core voltage (VDD) is asserted before both the I/O supply (VDDQ) and reference voltage (VREF). Only after all voltages have stabilized should interface configuration, including DOFF selection, be performed. Inboard regulators and supply sequencing logic must guarantee tight voltage ramp timing to minimize the risk of latch-up or bus contention. This sequencing is not just a datasheet detail—violations can manifest as hard-to-debug failures during bring-up, particularly in high-speed memory channels where even microseconds of out-of-order voltage can corrupt internal states.

A precision clock is fundamental for predictable operation, especially when activating the internal PLL for QDR II+ mode. System designs should implement oscillators with controlled phase noise and minimal deterministic jitter to promote rapid and reliable PLL lock. Noise on the clock line during ramp-up can introduce metastability, extending the lock time or resulting in unpredictable frequency multiplication. Board layouts aimed at this device often route clock and control traces with controlled impedance, minimizing crosstalk and ground bounce. Practical deployments frequently buffer or recondition clocks near the CY7C2165KV18-550BZC to ensure clean transitions at the package pins.

Once the PLL receives a valid, stable clock stream, it automatically synchronizes within approximately 20 μs. Initiating memory transactions prior to completion of this process may result in transient faults or protocol violations. Systems should poll for PLL lock or apply a fixed timing margin before enabling downstream logic. Input and output transactions are referenced strictly on specified clock edges, placing a premium on tight timing closure; skew between data and strobe lines can rapidly erode margins at high interface speeds. This necessitates impedance matching through precise trace routing and the correct selection of RQ termination to suppress signal reflections and mode hopping.

An often-overlooked aspect involves interaction between power integrity and the device’s internal isolation features. Glitches or excessive ripple during initial supply ramp can cause the device to misinterpret configuration pins or, in the worst case, fail to properly reset. Empirical evidence highlights the value of strategic decoupling—layered bulk and ceramic capacitors, placed as close as possible to supply pins—combined with controlled slew rates for supplies. Such practices optimize the balance between fast voltage establishment and noise immunity, supporting consistent system bring-up even in variable-temperature or harsh environments.

The DOFF pin, which controls latency mode, must be set only after supply voltages have met recommended thresholds. Hardware strapping or a microcontroller-based sequencer can enforce the correct pin state prior to clock initialization. This lockstep approach to voltage and configuration greatly reduces device-level instability and accelerates time-to-first-access in performance-sensitive applications, such as high-throughput networking or data acquisition systems.

Advanced designs benefit from pre-silicon simulation and post-silicon measurement, verifying that supply sequencing, clock quality, and termination guidelines are met under worst-case process and environmental conditions. Automated test benches, when configured to mimic propagating voltage or timing errors, often reveal sensitivity paths otherwise invisible in static analysis. Subtle misconfigurations—such as under-spec’d termination resistors or suboptimal capacitor placement—can severely restrict operational headroom, leading to intermittent faults or cumulative reliability degradation.

In summary, a methodical and layered approach to power-up, clock integrity, and high-frequency layout is not optional. It forms the backbone of stable CY7C2165KV18-550BZC operation. Distilling these principles into the hardware development process, rather than treating each as a discrete checklist item, produces systems that not only meet timing but also demonstrate resilience under suboptimal conditions. Continuous feedback from bring-up and in-field data can further refine the sequencing and signal integrity methodologies, positioning the overall system for robust, long-term deployment.

Electrical, Timing, and Environmental Specifications of CY7C2165KV18-550BZC

The CY7C2165KV18-550BZC is tailored for demanding memory subsystems requiring precise control of electrical and timing boundaries. At its core, operation from a 1.8 V supply (guaranteed within ±0.1 V) facilitates compatibility with advanced silicon nodes, balancing power efficiency with robust signal integrity. The allowable I/O supply voltage (VDDQ) spanning 1.4 V to 1.8 V aligns with prevalent high-speed logic standards, enabling seamless interface adaptation across diverse controller architectures.

Embedded HSTL support is implemented through carefully engineered input and output buffers. The output drivers feature internally regulated impedance, eliminating common reflection-induced errors in high-speed signaling environments. Programmability of the output resistance via an external RQ, selectable from 175 Ω to 350 Ω, permits in-system customization that harmonizes impedance with PCB trace geometry, mitigating transmission line effects and undershoot on dense layouts. This design choice is particularly beneficial in closely coupled multi-drop configurations, where each load can subtly degrade edge rates if impedance matching is suboptimal.

Clocking infrastructure is centered around a 550 MHz maximum operating frequency, unlocking burst read/write capabilities crucial for throughput-intensive computing platforms. Synchronous timing is enforced, with all I/O transitions aligned to the system clock. The device guarantees output data within 0.45 ns of the rising clock edge, setting a reliable and narrow data-valid window. Such deterministic timing mitigates setup and hold violations, even under aggressive interconnect and skew budget constraints typical in high-bandwidth memory channels. The underlying timing calibration and fine-grain control have shown repeatable margins during protocol interop evaluations, illustrating reliable performance even at the spec ceiling.

Thermal stability and electrical consistency are enhanced by the 165-ball FBGA package. The ball grid array inherently minimizes parasitic inductance, supporting clean high-frequency signaling while improving thermal conductance away from critical die areas. Across extended commercial and industrial temperature grades, operational parameters are tightly specified, ensuring the device maintains driver strength, timing skew, and input sensitivity even under continuous load and ambient fluctuation. This reliability under diverse field conditions directly supports low-error deployments in both edge and core computing environments.

A notable aspect is the convergence of flexibility and stability within this device. By integrating adaptive resistance and high-speed synchronization, interface designers gain leeway to optimize performance per system topology without sacrificing margin. Experience demonstrates that careful RQ selection and signal integrity tuning, combined with systematic clock domain analysis, result in consistently low bit error rates. In high-density memory banks, these design considerations translate to fewer rework cycles and scalable deployment for advanced memory controllers.

In summary, the layered specification of the CY7C2165KV18-550BZC—from its voltage domains and impedance management to its precise timing guarantees and robust physical implementation—underscores its suitability for modern synchronous memory applications demanding predictable, high-frequency operation and configurable interface control. The synergy between programmable hardware features and stringent timing ensures sustained signal quality and operational dependability in practical engineering scenarios.

Test and Debug Support: JTAG/Boundary Scan in CY7C2165KV18-550BZC

Test and debug requirements in high-speed digital systems necessitate robust features tailored for both manufacturing validation and in-field diagnostics. The CY7C2165KV18-550BZC addresses these demands through its integrated IEEE 1149.1-compliant JTAG boundary scan Test Access Port (TAP), a cornerstone mechanism that enhances the device’s observability and controllability without physical probes. The JTAG TAP architecture in this SRAM enables efficient execution of test routines directly at the board level, which significantly reduces setup time and pin access constraints commonly found in dense multi-layer designs.

The comprehensive boundary scan register covers each input and output signal, ensuring that subtle interconnect faults, such as high-impedance states or bridging, can be rapidly identified and isolated. By leveraging core JTAG instructions—like EXTEST for interconnect testing, SAMPLE/PRELOAD for state observation, BYPASS to minimize signal path delay, and dedicated CAPTURE registers for transient state monitoring—engineers gain granular visibility into both static and dynamic device conditions. This holistic signal coverage is critical during early board bring-up, where undetected soldering defects or routing issues can propagate to later system stages, increasing cost and debug complexity.

Disabling unnecessary test infrastructure is essential in some applications for power and security optimization. The device integrates a practical override mechanism: by holding TCK low, the boundary scan logic is effectively bypassed, seamlessly reverting the device to conventional high-performance SRAM operation, which is vital in cost-sensitive or resource-constrained deployment environments.

Utilizing boundary scan in live systems yields tangible benefits, extending beyond initial manufacturing. It facilitates field diagnostics, expedites root cause analysis for latent faults, and enables non-intrusive hardware observation during firmware or hardware co-debug cycles. A layered approach to JTAG application, systematically progressing from manufacturing screening to in-system debug, allows tight feedback loops between prototyping and mass production. This reduces time-to-market and improves product reliability. Notably, exploitation of capture and sample instructions in the TAP chain supports the implementation of real-time signal tracing strategies, bridging testability gaps often encountered in high-speed memory subsystems.

The breadth of support for industry-standard boundary scan in the CY7C2165KV18-550BZC positions it as a robust candidate for next-generation designs requiring scalable test, rapid troubleshooting, and risk mitigation across the hardware lifecycle. The decision to instantiate or suppress JTAG features empowers tailored deployment based on system constraints, underscoring the importance of configurable test infrastructure in modern electronic systems. This level of architectural foresight ensures that evolving debug and validation methodologies can be accommodated without expensive design revisions, ultimately increasing confidence in both initial and sustained performance of demanding memory applications.

Application Scenarios for CY7C2165KV18-550BZC in High-Speed Systems

The CY7C2165KV18-550BZC, designed explicitly for high-speed synchronous memory applications, demonstrates optimized functionality within systems demanding rapid throughput and minimal transaction latency. At the register-transfer level, the dual-port architecture fundamentally enables independent, non-blocking access for concurrent read and write activities. In practice, this feature is instrumental for backbone communication infrastructures such as carrier-class switches and core routers, where real-time packet forwarding, queue management, and header lookup operations require reliable, simultaneous memory access. Within these networking environments, the provision for parallel data streams reduces the cycle overhead typically associated with sequential memory operations, directly impacting overall system responsiveness.

The device’s burst protocol supports sustained data transfers across wide buses, a critical requirement for multi-lane data aggregation engines and storage controllers that handle intensive buffer workloads. Implementing such protocols allows designers to significantly reduce the complexity of control logic needed for high-throughput applications. The on-die termination further facilitates signal integrity when expanding the memory array, ensuring stable voltage references and minimizing reflections across the data path. This characteristic proves particularly beneficial when scaling up system memory, either by increasing word width to accommodate more simultaneous data lanes or by cascading devices to expand buffer depth. The reliability of signal termination at the physical layer is pivotal for noise-sensitive deployments, preventing subtle timing mismatches that often accompany high-frequency operation.

In custom FPGA or ASIC memory subsystems, the built-in echo clock and valid data signaling mechanisms streamline timing closure. A recurring challenge in integrating multi-port SRAMs is aligning clock domains while guaranteeing deterministic data arrival, especially as propagation delay and skew can compromise timing margins at elevated speeds. Here, the echo clock provides a reference for output timing, compensating for variable trace lengths in board designs and reducing gate-level complexity in the interface logic. Experience indicates that such explicit data-valid signaling allows for tighter pipelining in memory access arbitration and simplifies the design verification phase, decreasing the likelihood of late-stage timing issues during product development.

When evaluating the device for deployment, consideration of its tight access granularity and minimal internal latency offers strategic advantages in system architectures where microsecond-level responsiveness is critical. For example, high-performance packet engines and transactional storage modules benefit from predictable cycle timing, valuable for deterministic load balancing and conflict resolution across distributed memory resources. The implicit compatibility with industry-standard synchronous protocols also enables seamless substitution in legacy upgrade paths, allowing for incremental expansion without full redesign.

A key insight arising from real-world implementations is the significant reduction in board-level complexity respective to classic asynchronous SRAM solutions. The synchronous burst architecture and integrated termination simplify layout constraints, enhancing throughput and reliability while fostering scalability. This layered approach to integration—from signal integrity at the electrical interface, through protocol efficiency at the data channel, to architectural advantages in concurrent system design—underscores the CY7C2165KV18-550BZC’s position as an enabling component for next-generation, high-bandwidth digital platforms.

Potential Equivalent/Replacement Models for CY7C2165KV18-550BZC

Identifying potential equivalents or replacement models for CY7C2165KV18-550BZC demands a systematic approach grounded in protocol adherence, signal integrity, and long-term supply assurance. The CY7C2163KV18, as a direct family variant, leverages an 18-bit data width and 1M-depth configuration, mirroring the architectural foundation of the CY7C2165KV18. Both integrate seamlessly with the QDR II+ interface, feature programmable on-die termination, and adopt identical packaging and test schemes. This alignment significantly reduces the burden when requalifying hardware for new device sources, enabling straightforward drop-in replacements within designs built around this specific memory class.

Moving beyond direct family replacements, the landscape of QDR II+/QDR II-compatible SRAMs produced by alternate vendors becomes relevant. Here, the critical assessment covers not only the high-level protocol compliance but also nuanced factors such as signal tolerances, initialization sequences, and timing margins. These variables can introduce subtle incompatibilities, especially in designs operating near performance or voltage limits. Manufacturers frequently differ in how they implement timing windows, output drive strengths, or voltage supply tolerances, which may not be apparent in functional summaries. Engineers routinely dissect detailed datasheets to align timing diagrams, refresh intervals, and pin mappings, ensuring error-free operation after a component-level switch.

Practical field substitution often exposes unexpected system-level interactions. PCB trace impedance, power delivery variations, and the presence of parasitic elements can unmask previously latent weaknesses when devices with slightly divergent electrical characteristics are introduced. Even negligible changes in clock skew or chip enable timing may propagate into timing violations under worst-case conditions. Strategies such as pre-silicon simulation with updated IBIS models and in-situ ATE validation become essential to mitigate these risks.

An underappreciated success factor in multi-vendor sourcing is maintaining design headroom not only for the primary and alternate parts, but for likely future evolutions in interface standards and market availability. Over-constraining the design to nominal values of a single donor device restricts portfolio flexibility and can lock downstream system updates into costly redesigns. Flexible PCB layouts, buffer programmable threshold ranges, and robust firmware-level initialization routines help insulate projects from supply volatility.

It is advisable to cultivate collaborative relationships with vendor technical support to accelerate the vetting process for alternates. Direct engagement often yields deeper insights than datasheets alone—such as mask revision histories, errata likelihoods, and low-level signal behavior. Integrating these best practices and structuring the design with deliberate margin supports not only a smooth component substitution, but also resilient, future-proof system architecture.

Conclusion

The CY7C2165KV18-550BZC QDR II+ SRAM from Infineon Technologies exemplifies a specialized memory solution that addresses critical design requirements of high-throughput, low-latency systems. At the architectural level, its quad data rate interface leverages separate read and write ports, which mitigates contention and maximizes sustained data transfer rates. This approach enables real-time processing in latency-sensitive domains such as networking switches, FPGA-based compute pipelines, and high-frequency trading platforms. Deterministic access timing and stringent signal integrity are maintained across its operating conditions, grounded in robust silicon design and precise timing characteristics.

The packaging format conforms to industry standards, streamlining integration into both evolving and established hardware ecosystems. Its compatibility with prevailing PCB footprints and pinout conventions facilitates direct replacement or side-by-side qualification alongside incumbent memory components. This results in accelerated development cycles and reduced risk during system upgrades or maintenance.

The device’s comprehensive support for debugging and validation protocols equips engineering teams to rapidly pinpoint performance bottlenecks and verify data coherence, even under extended stress scenarios. Parametric stability under temperature and voltage fluctuations allows deployment in environments characterized by stringent reliability requirements, such as telecommunications infrastructure or aerospace sensor networks.

Flexible operational modes, including burst access and clock configuration options, allow tailoring to application-specific performance targets. Field experience consistently demonstrates that leveraging these features can unlock measurable gains in aggregate throughput and system responsiveness, especially when paired with high-speed controllers and optimized firmware layers.

From a procurement standpoint, the presence of compatible alternatives and clear cross-referencing minimizes supply chain disruptions. Strategic selection leverages long-term reliability data and lifecycle support profiles, ensuring continued availability and maintenance of mission-critical platforms. Notably, the balance of raw speed, configurability, and proven dependability positions the CY7C2165KV18-550BZC QDR II+ SRAM as an optimal choice for architects seeking robust memory alongside precision and scalability.

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Catalog

1. Product Overview: CY7C2165KV18-550BZC QDR II+ SRAM2. Core Architecture and Functional Features of CY7C2165KV18-550BZC3. Interface, Pinout, and Packaging Specifications of CY7C2165KV18-550BZC4. Operating Modes and Advanced Functionalities of CY7C2165KV18-550BZC5. Power-Up Sequence and Design Considerations for CY7C2165KV18-550BZC6. Electrical, Timing, and Environmental Specifications of CY7C2165KV18-550BZC7. Test and Debug Support: JTAG/Boundary Scan in CY7C2165KV18-550BZC8. Application Scenarios for CY7C2165KV18-550BZC in High-Speed Systems9. Potential Equivalent/Replacement Models for CY7C2165KV18-550BZC10. Conclusion

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Frequently Asked Questions (FAQ)

What is the main function of the CY7C2165KV18-550BZC SRAM chip?

The CY7C2165KV18-550BZC is a high-speed, synchronous SRAM designed for fast data access in electronic systems, supporting applications that require reliable volatile memory with a 550 MHz clock speed.

Is this 18MBIT SRAM chip compatible with my electronic device?

Yes, this SRAM chip features a parallel interface and a 165-FBGA package, making it suitable for various high-performance electronic devices requiring synchronous memory within operating temperature ranges of 0°C to 70°C.

What are the key advantages of using the QDR II+ SRAM series for memory solutions?

QDR II+ SRAM offers high bandwidth, low latency, and reliable data transfers at speeds up to 550 MHz, making it ideal for demanding applications like networking, telecom, and high-speed data processing.

Does this memory chip meet environmental and safety standards?

The CY7C2165KV18-550BZC is RoHS non-compliant and is classified under MSL level 3, indicating it can withstand moisture sensitivity during manufacturing, but it does not conform to RoHS environmental directives.

Where can I purchase the CY7C2165KV18-550BZC SRAM chip and what is the availability?

This product is available in stock with 1623 units, and you can purchase it through authorized electronic component distributors or directly from Digi-Electronics, ensuring original quality and reliable supply.

Quality Assurance (QC)

DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.

Quality Assurance
Counterfeit and defect prevention

Counterfeit and defect prevention

Comprehensive screening to identify counterfeit, refurbished, or defective components, ensuring only authentic and compliant parts are delivered.

Visual and packaging inspection

Visual and packaging inspection

Electrical performance verification

Verification of component appearance, markings, date codes, packaging integrity, and label consistency to ensure traceability and conformity.

Life and reliability evaluation

DiGi Certification
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CY7C2165KV18-550BZC CAD Models
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