CY7C1460KV33-167AXIT >
CY7C1460KV33-167AXIT
Infineon Technologies
IC SRAM 36MBIT PAR 100TQFP
997 Pcs New Original In Stock
SRAM - Synchronous, SDR Memory IC 36Mbit Parallel 167 MHz 3.4 ns 100-TQFP (14x20)
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CY7C1460KV33-167AXIT Infineon Technologies
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CY7C1460KV33-167AXIT

Product Overview

6325549

DiGi Electronics Part Number

CY7C1460KV33-167AXIT-DG
CY7C1460KV33-167AXIT

Description

IC SRAM 36MBIT PAR 100TQFP

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997 Pcs New Original In Stock
SRAM - Synchronous, SDR Memory IC 36Mbit Parallel 167 MHz 3.4 ns 100-TQFP (14x20)
Memory
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Minimum 1

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  • 200 1.8915 378.3000
  • 750 1.8252 1368.9000
  • 1500 1.7920 2688.0000
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CY7C1460KV33-167AXIT Technical Specifications

Category Memory, Memory

Manufacturer Infineon Technologies

Packaging Tape & Reel (TR)

Series NoBL™

Product Status Active

DiGi-Electronics Programmable Not Verified

Memory Type Volatile

Memory Format SRAM

Technology SRAM - Synchronous, SDR

Memory Size 36Mbit

Memory Organization 1M x 36

Memory Interface Parallel

Clock Frequency 167 MHz

Write Cycle Time - Word, Page -

Access Time 3.4 ns

Voltage - Supply 3.135V ~ 3.6V

Operating Temperature -40°C ~ 85°C (TA)

Mounting Type Surface Mount

Package / Case 100-LQFP

Supplier Device Package 100-TQFP (14x20)

Base Product Number CY7C1460

Datasheet & Documents

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041

Additional Information

Other Names
CY7C1460KV33-167AXIT-DG
SP005641747
448-CY7C1460KV33-167AXITTR
Standard Package
750

High-Speed Synchronous SRAMs for Demanding Applications: An In-Depth Look at the Infineon CY7C1460KV33-167AXIT Series

Introduction to CY7C1460KV33-167AXIT Series

The CY7C1460KV33-167AXIT series is engineered to optimize synchronous static RAM operations in advanced embedded environments demanding deterministic latency and consistent bandwidth. Utilizing a pipelined architecture, this family achieves industry-leading cycle-to-cycle timing, enabling sustained back-to-back access without dead cycles. Central to its operation is a full SRAM cell matrix, supporting true random access, and precise address/data parity management for enhanced data integrity. The device leverages an advanced process node to reduce soft-error rates and maximize operational reliability in mission-critical applications.

At the electrical layer, the CY7C1460KV33-167AXIT supports a 3.3V supply and I/O interface, balancing power efficiency and noise margin for robust signal integrity in dense designs. Pinout compatibility across device variants simplifies migration and redundancy strategies. The timing specifications, including fast access/clock-to-output and setup/hold windows, empower tight coupling with FPGAs and DSPs in multi-board architectures, facilitating synchronous data transfer at elevated bus frequencies. Asynchronous error indication lines and comprehensive status signaling further streamline system-level fault detection and recovery, extending deployment lifespans in demanding contexts.

Integrating the CY7C1460KV33-167AXIT into a design enhances throughput in real-time buffering, networking switch fabrics, and high-speed protocol translation layers. Practical deployment demonstrates that its deep pipelining allows simultaneous servicing of read and write requests—eliminating arbitration delays common to DRAM and pseudo-SRAM solutions—which is instrumental in packet processing engines and industrial automation controllers. The device's compatibility with extended temperature ranges and its multi-bank architecture support scaling in dense array storage, ensuring system resilience under fluctuating workloads and thermal conditions.

Selection of the optimal CY7C1460KV33 variant hinges on capacity requirements, access speed mandates, and system-level integration constraints. Experience suggests that aligning SRAM interface timing with the master clock domain is vital for predictable performance; the series’ well-documented timing diagrams and programmable burst features facilitate early test bench validation and efficient debug cycles. Forward-looking engineers recognize that, in networked embedded platforms, such synchronous SRAM enables precise control over memory pipelines, thereby reducing context-switch overhead and enabling deterministic task completion.

Interlinking core system buses with the CY7C1460KV33-167AXIT allows architects to leverage its deterministic read/write semantics for streamlined firmware routines and sub-millisecond transactional processing. Its configuration flexibility and robust error mitigation surface subtle reliability enhancements, especially in systems where uninterrupted operation is mandatory. The strategic coupling of these devices within overall memory hierarchies reveals deeper opportunities—such as architectural partitioning that segments time-critical operations for predictable parallel execution, unlocking differentiated performance advantages in competitive application domains.

Core Features of CY7C1460KV33-167AXIT Series

The CY7C1460KV33-167AXIT series SRAMs are architected to satisfy the rigorous requirements of performance-centric embedded systems. At the foundation of these devices, Zero Bus Latency™ (NoBL™) logic is implemented, eliminating traditional wait states and enabling immediate, back-to-back transactions. This mechanism utilizes advanced control path scheduling and synchronous pipeline staging, which collectively sustain throughput at frequencies up to 250 MHz. In practical deployment, this translates to no observable lag during consecutive operations; the 167 MHz option, delivering a clock-to-output latency of only 3.4 ns, minimizes bottlenecks in time-critical data paths.

Configurable memory organization provides application flexibility, with choices between high-width (1M x 36) and high-depth (2M x 18) access patterns over a 36 Mbit die. This flexibility is essential in systems where bandwidth matching between components frequently dictates both top-level system architecture and PCB layout constraints. The presence of fully registered input and output stages—aligned by rising clock edges—enables deep pipelining, allowing memory access arcs to synchronize precisely with processor or controller cores, preventing data hazards and enabling consistent throughput at high clock rates. This synchronous architecture also contributes to ease of timing closure during system integration, reducing the dependency on complex logic for wait state management.

Efficient memory utilization is enhanced by the SRAM’s byte write support, which allows targeted data modification within a memory word. This capability is crucial for embedded designs with dynamic data structures or fragmented storage allocation, such as networking buffers or frame-oriented DSP workloads. Byte-level granularity reduces power and write cycle overhead, especially in multi-user or interrupt-driven applications.

Voltage domain adaptability is achieved through dual I/O voltage compatibility. While the main array operates at 3.3 V for optimal cell performance, the I/O subsystem accepts both 2.5 V and 3.3 V signaling. This arrangement facilitates interoperability with mixed-voltage system buses and supports migration paths across evolving ASIC and FPGA families. In field applications, the ability to configure pin voltages often expedites system upgrades without board-level rework, providing greater design longevity and component reuse.

To address industry packaging standards and lifecycle requirements, these SRAMs are offered in Pb-free 100-pin TQFP and space-efficient 165-ball FBGA formats, both conforming to JEDEC guidelines. FBGA options are especially advantageous in densely populated logic boards where signal integrity and minimized trace length are critical.

Additional operational enhancements include synchronous self-timed write functionality and a dedicated clock enable control, streamlining memory transaction scheduling within tightly-coupled logic clusters. Built-in JEDEC-compliant JTAG boundary scan (IEEE 1149.1) not only facilitates production testing but also supports in-system debug and code coverage analysis, underpinning robust DFT and diagnostics strategies.

For environments with elevated soft error risk—such as those exposed to fluctuating electromagnetic fields or cosmic rays—the integrated on-chip ECC (Error Correction Code) engine in KVE33 and KVE33/1462 variants offers single-bit error correction and detection. This feature brings system-level reliability closer to enterprise standards, protecting mission-critical storage without reliance on external ECC logic. Experience shows these designs can substantially reduce functional failures linked to memory corruption, a benefit particularly noticeable in aerospace, medical, and infrastructure control platforms.

Synthesizing these attributes, the CY7C1460KV33-167AXIT series serves as a strategic choice for designers seeking SRAM solutions that combine velocity, flexibility, and robust system integration. The layered design approach—from protocol logic to I/O adaptability and error resilience—mirrors best practices in advanced digital engineering, providing a practical and scalable memory element for next-generation application spaces.

Architecture and Functional Operation of CY7C1460KV33-167AXIT Series

The architecture of the CY7C1460KV33-167AXIT series targets applications where synchronous, deterministic high-speed memory cycles are essential. Leveraging advanced clocking schemes, every input on the device—including address, control, and data signals—is registered on the rising edge of the system clock. This synchronization guarantees cycle-level predictability, which is critical when integrating the memory into pipelined data paths or latency-sensitive control loops. Outputs are also clock-registered, ensuring that output transitions are tightly aligned with core logic timing. This approach effectively minimizes setup and hold margin uncertainties that are often encountered in asynchronous designs, thus simplifying timing closure in demanding board-level signal environments.

A dedicated clock enable (CEN) input provides a robust gating mechanism for the internal clock tree, enabling precise, glitch-free suspension of memory operation. Unlike crude chip enables that disable I/O logic, CEN allows the device to pause while maintaining internal state, supporting dynamic power flows without requiring re-initialization. This feature is especially advantageous in systems that cycle through idle and burst-activity phases, such as network routers with variable packet rates or DSP systems adapting to dynamic workloads. Empirically, leveraging CEN in conjunction with clock-domain crossing techniques prevents metastability and reduces inactive-state current consumption.

The memory’s read/write engine employs true Zero Bus Latency™ (ZBT) logic, crucial for maintaining throughput in systems that cannot tolerate wait states. By latching address and chip enables on each clock cycle and immediately decoding operation type from the write enable (WE) signal, the CY7C1460KV33-167AXIT supports seamless back-to-back burst cycles. This is particularly effective in high-throughput scenarios such as line-rate packet processing, video pipelines, and data acquisition buffers. In practical deployment, careful alignment of command pipelines and appropriate isolation of the WE signal are necessary to avoid bus contention, an issue mitigated by the device’s inherent protocol timing.

A programmable burst counter at the core offers selectable linear or interleaved addressing modes via the MODE input. Linear bursts facilitate memory accesses with contiguous address strides, optimizing for cache and FIFO applications. Interleaved mode supports address sequences with specific stride patterns, aligning with memory interface mapping common in packet buffering. Four-word bursts per address cycle heavily reduce command and address bus overhead, effectively increasing the useable bandwidth of the controller-memory interface. In tightly-coupled multicore scenarios, designing the address dispatch logic to match burst boundaries further optimizes DMA controller efficiency.

Byte write support is handled via dedicated byte enable signals, allowing fine-grained masking of data bytes during write cycles. This capability is vital for partial-word updates typical in mixed-mode applications, such as ECC registers or bitmap management, where only selected bytes should be modified. Experience demonstrates that combining byte write logic with zero bus latency mode enables atomic read-modify-write cycles, crucial for thread-safe buffer management in shared-memory systems.

Power management is addressed via an asynchronous ZZ input, which transitions the device to a low-power sleep state with data retention. Entry and exit from sleep mode occur within two clock cycles, ensuring rapid responsiveness when power saving is required without compromising data integrity. In real-time embedded systems, this mechanism supports aggressive dynamic power-down schemes that balance performance needs against energy constraints, with observed recovery times consistently fitting within typical wakeup budgets for communication systems.

The structural marriage of synchronous control, flexible burst capability, granular byte operations, and advanced power management firmly positions the CY7C1460KV33-167AXIT series as an optimal SRAM solution in bandwidth-intensive, timing-critical architectures. Insights from large-scale deployment highlight the value of integrating true synchronous semantics with programmable transfer granularity, as this approach more readily satisfies the demanding interface requirements and temporal predictability needed in modern, high-reliability systems.

Pin Configuration and Package Information of CY7C1460KV33-167AXIT Series

Pin configuration and package selection for the CY7C1460KV33-167AXIT series directly impact both board-level architecture and overall system reliability. This series supports two distinct package types, each tailored to address specific integration constraints and performance targets within high-speed memory subsystems.

The 100-pin Thin Quad Flat Package (TQFP), measuring 14x20 mm, provides an optimal form factor for standard multilayer PCB applications. Leaded pins enable reliable manual and automated assembly, preventing soldering defects during manufacturing and simplifying in-circuit test probe access. This package's mechanical robustness facilitates easier debugging and device replacement, significantly reducing downtime in maintenance-intensive environments. Board designers benefit from straightforward signal tracing, with the physical pin spacing mitigating crosstalk risk and enabling conventional routing strategies without stringent impedance control demands.

Alternatively, the 165-ball Fine Ball Grid Array (FBGA) with a 15x17 mm body caters to high-density and space-constrained layouts. The matrix-style ball placement achieves both minimized footprint and enhanced electrical performance, critical for advanced memory interface requirements where higher bandwidth and signal integrity are priorities. BGA placement requires careful attention to board stack-up, via-in-pad design, and thermal relief considerations. Experience demonstrates that although initial assembly processes are more demanding, FBGA excels in applications prioritizing compact form factors, automated manufacturing throughput, and stringent EMI containment. Rework capabilities, while more limited than TQFP, can be mitigated by thoughtful X-ray inspection strategies and precise reflow profiling.

Pinout architecture in both packages is meticulously arranged to segregate control, address, and data functions. Synchronous control signals are grouped along predictable rows or ball patterns, allowing for systematic trace assignment that minimizes stub trace lengths and enhances timing closure. Detailed pin definitions facilitate direct connection to standard synchronous memory controllers; signal naming conventions and functional blocks are aligned with typical JEDEC standards, improving cross-compatibility and reducing the risk of integration errors.

Selecting between TQFP and FBGA for the CY7C1460KV33-167AXIT centers on application-specific priorities. In scenarios where in-system testability, field service, and accessible rework drive design choices, TQFP consistently delivers lower lifecycle costs and greater flexibility for iterative hardware validation. Conversely, FBGA unlocks higher component density and superior electrical characteristics, which are fundamental for miniaturized or performance-centric platforms where board real estate and signal speeds are at a premium.

Analysis of field deployments consistently underscores the necessity of aligning package choice with both project scale and expected operational stressors. Strategic anticipation of manufacturing volume, environment, and service model will yield optimal results, with a clear preference for signal integrity-driven BGA adoption in cutting-edge digital systems and TQFP retaining an edge in prototyping and legacy support contexts. This dual-package strategy enables the CY7C1460KV33-167AXIT series to cover a broad spectrum of high-speed memory design requirements, providing engineers with the flexibility to tailor physical integration to evolving technical and operational constraints.

Advanced Modes, On-Chip ECC, and Sleep Function in CY7C1460KV33-167AXIT Series

Advanced burst mode operation in the CY7C1460KV33-167AXIT series offers precise control over memory access sequencing by leveraging the MODE input to toggle between linear and interleaved burst addressing. This flexibility enables seamless integration with host controllers ranging from high-throughput FPGAs to specialized DSP architectures, each of which may implement unique burst instruction protocols. Selection of linear bursting achieves straightforward sequential data fetches ideal for bulk memory transfers, whereas interleaved mode restructures access patterns to match cache line interleaving or optimize pipeline depth, effectively reducing latency and bus contention. The underlying mechanism centers on address counter logic within the memory interface, which interprets burst configuration and strides based on MODE, facilitating plug-and-play adaptability across diverse system requirements.

Embedded error correction elevates data reliability, particularly in the ECC-enabled variants such as CY7C1460KVE33 and CY7C1462KVE33. The on-chip ECC mechanism relies on combinational Hamming code circuitry woven into the read/write data paths. Each memory word includes check bits that, upon data retrieval, are immediately validated; any detected single-bit error is corrected in situ before the processor or controller receives the data. This hardware-driven approach ensures real-time correction without added latency on the critical path and effectively drives the soft error rate below 0.01 FIT/Mbit—a level considered virtually negligible in high-availability applications. These error mitigation capabilities directly address deployment challenges in mission-critical fields such as telecom infrastructure and industrial automation, where silent failures and rare bit flips are unacceptable. The minimized error rate, far surpassing standard SRAM, results from both robust semiconductor process controls and the intrinsic self-healing logic of the ECC blocks.

The device’s power management is further reinforced by the asynchronous ZZ sleep function. Driving the ZZ pin asynchronously routes the memory into a deep-sleep state, slashing static power draw to an absolute minimum. Transition into and out of sleep mode is designed to be immediate, bypassing clock synchronization delays and state retention complexities often encountered in pseudo-static designs. This feature is particularly advantageous in network interface blades and edge computing nodes, where memory banks must cyclically power down in linecard or peripheral sleep scenarios without losing data coherence. Crafting reliable sleep-wake sequences requires attention to firmware handling of address and control pins, ensuring no incomplete accesses occur during sleep entry. Empirical results show that integrating the ZZ feature streamlines total system power budgeting, a crucial factor for deployments with stringent thermal and energy constraints.

From a system architecture viewpoint, tight coordination between advanced burst mode selection, robust ECC handling, and dynamic sleep transitions is essential for extracting maximum value from the CY7C1460KV33-167AXIT series. Optimized controller logic dynamically negotiates addressing modes to match real-time access patterns, integrates ECC status signals for predictive failure analytics, and leverages accurate sleep control to balance performance and power. These design insights position the memory device not merely as a passive storage medium but as an active participant in overall system reliability and efficiency. Such capabilities enable deployment in environments demanding both resilience and adaptability, underscoring the series’ suitability for next-generation embedded and communication systems.

Boundary Scan (JTAG) Capabilities of CY7C1460KV33-167AXIT Series

Boundary scan (JTAG) functionality within the CY7C1460KV33-167AXIT series embodies full compliance with the IEEE 1149.1 standard, unifying debug and test strategies in high-density TQFP and FBGA package variants. The architecture integrates a dedicated Test Access Port (TAP) alongside key registers—including instruction, bypass, boundary scan, and identification registers—establishing a granular and non-intrusive test interface directly at the device boundary.

At the electrical and logical layers, the boundary scan cells are positioned at every I/O pin, permitting real-time observation and control of pin states. This enables deterministic continuity testing, comprehensive shorts-and-opens detection, and accurate fault isolation, even prior to IR reflow, minimizing early-life failures and expediting root cause analysis. The operational decoupling of TAP logic from the core functional data path ensures that boundary scan operations proceed independently, supporting at-speed system clocks without inducing timing conflicts or adding design complexity. This separation proves critical in synchronous systems exceeding 166 MHz, where control path interference could otherwise compromise signal timing or violate setup and hold requirements.

In deploying boundary scan during board-level validation, practitioners leverage the scan chain to inject diagnostic patterns, monitor scan out responses, and directly interrogate package-level connectivity. The JTAG engine not only supports first-article board bring-up but also enables systematic regression testing across production lots. Its capacity for non-intrusive access simplifies troubleshooting of intermittent, layout-dependent faults that evade functional test coverage. Additionally, in multi-device topologies, the instruction and bypass registers facilitate segmenting scan operations, ensuring optimal test access without inducing bus contention or unnecessary scan chain length.

Legacy compatibility considerations are addressed via a JTAG disablement option, enabling seamless drop-in replacement with the CY7C1460KV33-167AXIT series in designs not utilizing scan features. All JTAG-related pins are tied internally with robust pull-ups, which stabilize bus state, reduce floating node susceptibility, and streamline PCB routing—especially beneficial in complex multi-layer boards where signal integrity and trace density are primary concerns.

A notable application scenario arises during high-volume manufacturing, where boundary scan support accelerates the detection and isolation of solder joint or assembly defects without resorting to time-consuming probe-based methods. The practical impact emerges in reduced rework cycles, improved yield, and accelerated time-to-market. System architects also exploit boundary scan for in-situ diagnostics, remotely accessing device state in the field for predictive maintenance or rapid recovery following fault events.

Overall, the CY7C1460KV33-167AXIT series' robust and standards-compliant JTAG implementation provides a scalable test and debug backbone, adaptable for both advanced manufacturing and long-term system reliability initiatives. This architecture’s layered approach simultaneously enhances test coverage, simplifies field support, and reduces overall product lifecycle risk by embedding diagnostic intelligence at the silicon boundary.

Electrical and Thermal Characteristics of CY7C1460KV33-167AXIT Series

The CY7C1460KV33-167AXIT series, a high-performance synchronous SRAM, exemplifies the engineering trade-offs involved in balancing speed, reliability, and signal integrity within stringent electrical and thermal constraints. Central to its design is a tightly regulated supply voltage, maintained at 3.3 V ±0.3 V for the core and selectable 3.3 V or 2.5 V for the I/O, ensuring compatibility across varied logic families and system architectures. This flexible I/O voltage selection accommodates both legacy 3.3 V interfaces and more modern 2.5 V signaling, a critical factor when integrating with mixed-voltage backplanes or evolving platform standards.

Peak device throughput is defined by a maximum clock frequency of 167 MHz for the 167AXIT variant, with certain fast-bin selections reaching up to 250 MHz. At these speeds, minimization of signal skew and propagation delay becomes paramount. A clock-to-output delay capped at 3.4 ns (max) at 167 MHz enables tight timing margins and facilitates system designs requiring low-access-latency SRAM, particularly in memory interleaving or cache applications. Input/output designs are optimized to minimize leakage while maintaining robust drive strength, supporting direct connection to long-distance parallel buses commonly found in PCI and industrial backplane environments. This strategic tailoring reduces signal degradation and the risk of data contention across densely populated PCB traces.

From a thermal performance standpoint, the CY7C1460KV33-167AXIT adheres closely to JEDEC specifications, encompassing defined thermal resistance metrics (theta-JA, theta-JC) and maximum case temperatures. This conformity enables predictable heat dissipation profiles, vital for both passive convection and active cooling deployments. Encapsulation and internal layout are engineered to optimize heat spreading, ensuring stable operation across both commercial (0 °C to+70 °C) and industrial (–40 °C to +85 °C) temperature class variants. Thermal capacitance characteristics, also specified per JEDEC, support reliable in-situ thermal modeling and risk mitigation during high-density system assembly.

For assembly and qualification, the soldering profiles prescribed by JEDEC streamline adoption into automated manufacturing processes, reducing reflow-induced stress on package leads and die attach structures. Attention to these process details mitigates latent failure mechanisms such as interfacial cracks or electromigration, which might otherwise compromise long-term device integrity in mission-critical deployments.

Real-world board-level implementations have highlighted the importance of maintaining tight decoupling around the Vcc pins due to sensitivity to transient loads at high operation speeds. Placement of low-ESR capacitors and careful ground plane partitioning directly correlates with reduced output jitter and improved EMI compliance. In multi-rank memory systems, controlled-impedance traces and aggressive timing analysis are regularly required to extract full performance, particularly when leveraging the part’s fast clock-to-output edge in time-critical data pipelines.

Ultimately, the CY7C1460KV33-167AXIT’s electrical and thermal profile positions it as a robust solution for designers seeking low-latency, high-throughput SRAM in noise-prone, thermally variable environments, such as telecom switches, network routers, and industrial controllers. Optimal performance is achieved when its operational boundaries are observed in conjunction with disciplined PCB layout and a proactive, simulation-driven approach to system integration. This series demonstrates that precision adherence to both electrical and thermal guidelines is indispensable to unlocking the SRAM’s full capabilities within advanced embedded architectures.

Engineering Applications and Design Considerations for CY7C1460KV33-167AXIT Series

The CY7C1460KV33-167AXIT series is engineered for deployment in applications where memory access speed, bandwidth, and reliability are prioritized. At the heart of its architecture is a synchronous SRAM with advanced control logic, facilitating minimal access latencies and supporting high-frequency bus operations. Its 167 MHz clock rating aligns well with fast data pipelines, directly benefiting systems that must buffer or switch large volumes of data with minimal stalls.

In network infrastructure, such as switches, routers, and advanced linecards, this device excels in arbitration and context-switching tasks. The SRAM's low-latency profile mitigates bottlenecks during dynamic packet routing or deep-packet inspection, allowing flow state tables and buffer queues to be maintained without degrading throughput. Critical to such topologies is the reduction of memory access contention; the device’s flexible I/O configurations and sleep control logic enable tuning for bus efficiency and low-power idle states, directly translating to reduced contention and improved parallelism on shared buses.

Data acquisition and storage applications, including front-end buffering for ADCs/DACs or high-integrity RAID controllers, exploit the CY7C1460KV33-167AXIT’s burst transfer modes. By issuing sequential read or write commands, controllers can extract maximum throughput, efficiently staging pre- and post-processed streams. Here, byte-write capability guards against unnecessary word-wide writes, preserving device endurance and simplifying firmware-level error management. Engineers integrating this part into storage arrays favor ECC support—optionally provisioned on some variants—especially when deployed in mission-critical environments such as telecom basestations or satellite uplinks. Experience shows that ECC not only addresses transient faults but also allows for proactive health monitoring and early warning thresholds in fault-tolerant designs.

Instrumentation architectures, including logic analyzers and high-resolution oscilloscopes, require deterministic timing and fast data staging. The deterministic cycle timing, stemming from its fully synchronous interface, ensures consistent acquisition windows and reliable cache flushing—key factors in synchronous triggering and timestamp alignment. Implementation on board-level testbeds can be streamlined by leveraging the embedded JTAG scan chain and boundary scan registers for in situ verification during prototype validation or field diagnostics, significantly reducing root-cause isolation time for interface issues or marginal signal integrity.

Expanding into video and image processing, the part’s ability to act as a low-latency frame buffer provides tangible latency reductions in real-time encoders or machine vision systems. Burst mode optimizes the repeated line loads and flushes required by these workloads, while byte granularity simplifies handling of partial frames or region-of-interest update patterns. Insights from practical system integration indicate that careful PCB stackup and trace routing, especially with respect to the synchronous clock and control signals, greatly enhance timing margins and reduce bit errors, particularly when paired with proper power supply decoupling and controlled impedance interconnects.

System designers are advised to conduct simulation sweeps focusing on worst-case access scenarios, rigorously validating timing closure across operating voltage and temperature margins. Early adoption in high-density, multi-slot backplanes has also illustrated the importance of aligning the part’s sleep control sequencing with domain-specific power management strategies, preventing bus contention and enhancing hot-swap robustness.

Through judicious feature utilization—byte-write, burst, ECC, and flexible I/O control—the CY7C1460KV33-167AXIT series reveals its value in high-availability, performance-sensitive designs. Its architecture is best leveraged when design teams orchestrate memory hierarchy, bus scheduling, and reliability features in concert, ensuring optimal total system throughput and resilience.

Potential Equivalent/Replacement Models for CY7C1460KV33-167AXIT Series

The CY7C1460KV33-167AXIT is engineered for high-performance, low-latency memory subsystems, particularly where Zero Bus Turnaround (ZBT) synchronous SRAM technology is essential. To maintain robust system architecture amid lifecycle changes, strategic evaluation of compatible or equivalent models is critical. Layered analysis of equivalency must begin with direct family variants such as the CY7C1460KVE33, which introduces error correction code (ECC) functionality, and the CY7C1462KVE33, offering an alternative organization (2M x 18) while retaining ECC capabilities. This internal family expansion provides options for designs demanding enhanced data integrity or modified memory depth, with minimal impact on board-level routing due to package consistency.

Moving outward, consideration of functional equivalents among Infineon, Cypress, or Cypress-derived ZBT/NoBL™ SRAMs centers on synchronous operation, speed class alignment, and interface uniformity. Detailed review of device datasheets is vital to confirm matching package dimensions, voltage thresholds, and input/output tolerances. Particular scrutiny of ECC implementation is necessary; integration of ECC can influence both memory controller requirements and timing constraints, necessitating revalidation of critical paths in FPGA or ASIC environments. Seamless adoption of such equivalents in existing designs is facilitated by leveraging close cooperation between engineering and supply chain teams, which can surface nuances in factory programming or screening processes.

Cross-vendor alternatives broaden supply options but demand rigorous comparison. Infineon's cross-reference guides provide initial direction, but reliance on JEDEC-standard pinout and signal assignments should not overshadow subtle differences in timing edges, address setup/hold windows, and asynchronous signal responsiveness. Empirical validation—including timing analysis under expected operating conditions and prototype-level characterization—mitigates risk of latent incompatibility. For real-time, safety-critical systems, margin testing or even a hybrid deployment during transition phases supports operational integrity in the face of slightly divergent datasheet specifications.

Insertion of CY7C1460KV33 or its ECC-enabled variant into legacy systems once populated with older ZBT SRAMs typically enables straightforward migration, as Infineon has preserved both pin and bus-cycle timing for backward compatibility. However, practical experience identifies that high-frequency, wide-data bus layouts may expose edge-case signal skew or cross-talk not documented in literature. Benchmarking under load and environmental stress conditions yields actionable insight, guiding minor adjustments to termination schemes or trace geometry as necessary.

A layered approach to qualification integrates theoretical specification matching with empirical evaluation of systemic impact. This perspective extends beyond datasheet-level comparison, advocating for iterative loopbacks between design, prototyping, and supply assurance teams. Sustained system reliability flourishes where cross-functional diligence exposes and resolves marginal interoperability issues, ensuring both immediate drop-in success and long-term design scalability. The fusion of logical specification vetting with real-world validation is central to resilient, future-ready memory infrastructure.

Conclusion

The Infineon CY7C1460KV33-167AXIT series exemplifies high-performance synchronous SRAM, engineered for demanding memory subsystems where latency, throughput, and resilience converge as top priorities. Central to its architecture is the robust synchronous interface, orchestrating both read and write cycles with precision-timed clocking. This deterministic timing framework eliminates data contention and minimizes skew, which is especially critical in tightly-coupled multiprocessor environments or networking routers that handle high-speed packet buffering.

On-chip error correction code (ECC) forms the foundation for enhanced data reliability, enabling transparent detection and correction of single-bit errors within each memory word. This feature elevates system uptime metrics and removes a burdensome layer of error management from the host controller logic. In field deployments—particularly where soft-errors can occur due to environmental factors or intensive compute loads—the built-in ECC mechanism translates directly to a measurable reduction in maintenance interventions and unplanned resets.

Configurability emerges through support for programmable burst lengths and burst sequencing, addressing diverse access patterns found in cache subsystems, video frame buffers, and FPGA-based data pipelines. Low-power modes, including advanced sleep and partial array refresh, empower system architects to implement aggressive power gating during idle periods, without the cost or latency of complete data loss. This upgrades the memory block from a passive component to an active participant in holistic power optimization strategies for embedded and telecom equipment.

JTAG boundary scan, adhering to IEEE 1149.1 standards, streamlines both initial debugging and in-circuit test procedures over the product lifecycle. Experience from complex board bring-up cycles demonstrates the value of full-featured, standards-compliant test access—enabling rapid isolation of interconnect faults and supporting firmware-driven diagnostics in situ. As component lifecycles stretch, the convenience of such testability features compounds, substantially lowering cost-of-ownership estimates and prolonging design viability.

Packaging options, specified with industry-standard footprints, smooth the path for automated assembly, thermal management planning, and eventual rework or replacement scenarios. For applications in industrial, avionics, and medical platforms—where design reuse and long-term support are routine requirements—the non-proprietary, accessible form factor of the series lowers integration risk while fostering multi-sourcing flexibility.

In practice, designs leveraging this memory have consistently demonstrated tangible advantages in maximum achievable bandwidth and error resilience, especially in architectures where memory transactions dominate system-level bottlenecks. The interplay of high-speed synchronous operation, embedded data protection, flexible access management, and robust manufacturing support positions the CY7C1460KV33-167AXIT not merely as a component, but as a core design asset for forward-looking, high-reliability compute infrastructure. Such characteristics challenge the notion that memory is a secondary consideration, instead advocating for deliberate, architecture-level investment at this key juncture of the signal chain.

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1. Introduction to CY7C1460KV33-167AXIT Series2. Core Features of CY7C1460KV33-167AXIT Series3. Architecture and Functional Operation of CY7C1460KV33-167AXIT Series4. Pin Configuration and Package Information of CY7C1460KV33-167AXIT Series5. Advanced Modes, On-Chip ECC, and Sleep Function in CY7C1460KV33-167AXIT Series6. Boundary Scan (JTAG) Capabilities of CY7C1460KV33-167AXIT Series7. Electrical and Thermal Characteristics of CY7C1460KV33-167AXIT Series8. Engineering Applications and Design Considerations for CY7C1460KV33-167AXIT Series9. Potential Equivalent/Replacement Models for CY7C1460KV33-167AXIT Series10. Conclusion

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Quality Assurance (QC)

DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.

Quality Assurance
Counterfeit and defect prevention

Counterfeit and defect prevention

Comprehensive screening to identify counterfeit, refurbished, or defective components, ensuring only authentic and compliant parts are delivered.

Visual and packaging inspection

Visual and packaging inspection

Electrical performance verification

Verification of component appearance, markings, date codes, packaging integrity, and label consistency to ensure traceability and conformity.

Life and reliability evaluation

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CY7C1460KV33-167AXIT CAD Models
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