CY7C1460KV33-167AXI >
CY7C1460KV33-167AXI
Infineon Technologies
IC SRAM 36MBIT PAR 100TQFP
794 Pcs New Original In Stock
SRAM - Synchronous, SDR Memory IC 36Mbit Parallel 167 MHz 3.4 ns 100-TQFP (14x20)
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CY7C1460KV33-167AXI Infineon Technologies
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CY7C1460KV33-167AXI

Product Overview

6333358

DiGi Electronics Part Number

CY7C1460KV33-167AXI-DG
CY7C1460KV33-167AXI

Description

IC SRAM 36MBIT PAR 100TQFP

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794 Pcs New Original In Stock
SRAM - Synchronous, SDR Memory IC 36Mbit Parallel 167 MHz 3.4 ns 100-TQFP (14x20)
Memory
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Minimum 1

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CY7C1460KV33-167AXI Technical Specifications

Category Memory, Memory

Manufacturer Infineon Technologies

Packaging Tray

Series NoBL™

Product Status Active

DiGi-Electronics Programmable Not Verified

Memory Type Volatile

Memory Format SRAM

Technology SRAM - Synchronous, SDR

Memory Size 36Mbit

Memory Organization 1M x 36

Memory Interface Parallel

Clock Frequency 167 MHz

Write Cycle Time - Word, Page -

Access Time 3.4 ns

Voltage - Supply 3.135V ~ 3.6V

Operating Temperature -40°C ~ 85°C (TA)

Mounting Type Surface Mount

Package / Case 100-LQFP

Supplier Device Package 100-TQFP (14x20)

Base Product Number CY7C1460

Datasheet & Documents

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041

Additional Information

Other Names
2832-CY7C1460KV33-167AXI
2015-CY7C1460KV33-167AXI
SP005641745
Standard Package
144

CY7C1460KV33-167AXI: High-Performance 36-Mbit Synchronous SRAM with No Bus Latency for Advanced Networking and Industrial Applications

Product Overview: CY7C1460KV33-167AXI Synchronous SRAM

The CY7C1460KV33-167AXI stands as a high-bandwidth, pipelined burst synchronous SRAM optimized for advanced data buffering demands. Internally, the device leverages a meticulously engineered synchronous pipeline with a burst architecture, synchronizing all operations to a rising clock edge. Each memory access cycle is precisely timed, allowing rapid, predictable data movement crucial for deterministic system behavior. The 36-Mbit density, organized as 1M × 36 bits, addresses large data set buffering needs found in switching fabrics, protocol processors, and embedded network applications.

Zero-bus-latency (NoBL™) design sits at the core of the part’s performance differentiation. Through an advanced combinatorial control logic, the device removes wait states during successive, alternating read and write cycles. This enables continuous data streaming, drastically reducing per-access latency—a critical metric in applications where throughput must remain consistent under high-frequency access patterns. In typical networking environments, such as frame buffering in Gigabit Ethernet switches, the absence of turn-around cycles directly minimizes transmission delays and packet loss on congested links.

Signal integrity is maintained through the TQFP package’s short lead lengths and the device’s carefully controlled output drivers, supporting both 3.3V and lower-voltage I/O interfaces with reduced EMI footprint. Designers benefit from matched impedance and minimal simultaneous switching noise, factors that are indispensable in multi-Gbps systems where PCB trace layout leaves minimal margin for signal degradation.

Interface flexibility is a further strength; the CY7C1460KV33-167AXI supports standard synchronous SRAM protocols, with centralized, registered address, data, and control lines. This reduces timing variation, simplifying controller design and enhancing scalability for multi-SRAM memory arrays. The pipelining employed allows the memory to decouple access setup from data delivery, enabling clock rates up to 167 MHz with guaranteed access times. During system bring-up, predictable timing aids rapid fault isolation, while the well-documented signal timing makes this SRAM a frequent choice for quick-turn prototypes.

A notable practical consideration is the optimized burst length selection; designers achieve best-in-class efficiency with burst settings matched to core processor cache lines or switching ASIC data frames. In one high-throughput image-processing deployment, aligning the SRAM’s burst read/write lengths with frame buffer granularity virtually eliminated buffer misses and reduced power draw. Careful attention to clock skew, setup/hold times, and signal termination enables reliable operation even as board-level trace counts rise and voltage margins tighten.

The distinct advantage of NoBL™ architecture over traditional SRAM, which suffers from read-to-write and write-to-read turnaround penalties, becomes evident when scaling to modern, latency-sensitive topologies. This design philosophy prioritizes sustained bandwidth rather than only peak transfer rate, a nuance frequently undervalued in systems where overall conduit congestion, not just per-access latency, constrains real performance gains.

By embedding the memory subsystem with CY7C1460KV33-167AXI, system architects unlock both higher transaction throughput and deterministic quality-of-service guarantees. Integration best practices, such as robust decoupling, ground-plane isolation, and controlled impedance environments, further amplify the benefits offered by this device, positioning it as a linchpin for next-generation high-speed buffering applications.

Key Features of the CY7C1460KV33-167AXI Series

The CY7C1460KV33-167AXI SRAM device integrates a suite of advanced architectural elements that directly address the requirements of high-performance embedded and networking applications. At its core, the 36-Mbit, 1M × 36 organization accommodates wide-word data handling essential for parallel datapaths and memory-intensive processing modules. This deep density plays a critical role in buffering, lookup tables, and cache implementations where bandwidth and reliability are pivotal.

Zero Bus Latency™ (NoBL™) logic eliminates traditional wait states by supporting continuous, back-to-back read and write cycles. This design ensures seamless data flow across clock boundaries, minimizing bottlenecks in high-throughput pipelines. Embedded synchronous pipelining guarantees that all I/O activities are tightly coupled to the rising clock edge, substantially reducing timing uncertainty and skew—key factors for maintaining data integrity in multi-stage processing environments such as ASIC or FPGA-driven systems.

Speed grades scaling up to 250 MHz equip designers with headroom to meet escalating clock domain requirements. The CY7C1460KV33-167AXI’s 167 MHz rating paired with a 3.4 ns access time positions it as a versatile intermediary for both moderate and high-speed fabrics, often observed in telecom infrastructure and data aggregation nodes.

Byte-selectable write operations via four mask signals offer granular control over partial data writes. This capability is imperative when updating status flags, performing algorithmic computations, or managing sub-word registers without disturbing surrounding bits—effectively optimizing both performance and resource efficiency in firmware-controlled environments.

Power and I/O flexibility, with the 3.3 V core and selectable 3.3 V/2.5 V interface, streamline integration with mixed-voltage platforms, easing migration challenges and lowering board-level complexity. This adaptability is especially beneficial in environments transitioning between legacy and next-generation silicon.

The integration of on-chip ECC distinguishes this SRAM in resilience-critical systems. Single-bit error detection and correction, coupled with a dramatically reduced SER, mitigate degradation due to radiation or process anomalies. From experience, ECC not only enhances reliability in aerospace and telecommunications but also simplifies fault management and extends operational lifespans where maintenance access is constrained.

Pin and functional compatibility with industry-standard ZBT SRAMs simplifies substitution and enables scalability within established bus architectures. Synchronous chip enable signals paired with asynchronous output enable functionality facilitate complex system topologies, allowing for precise control in clocked and event-driven subsystems.

Selectable burst operation, supporting both linear and interleaved modes, offers flexibility for varying access patterns. Linear burst is preferable in sequential access scenarios such as streaming, while interleaved mode optimizes for random access, commonly utilized in router memory tables or signal processing pipelines.

Integrated boundary scan (IEEE 1149.1, JTAG) capabilities enable robust in-system diagnosis and test coverage, crucial during hardware prototyping and production validation for multilayered board assemblies. This feature expedites debug cycles and supports proactive fault isolation in production deployments.

The low-power "ZZ" sleep mode is strategically implemented, allowing subsystems to throttle power consumption without full power cycling—a substantial advantage in battery-backed designs and energy-conscious installations. Reliability under low-power states is maintained, avoiding data retention concerns typical of deep sleep architectures.

In sum, the layered feature architecture of the CY7C1460KV33-167AXI reflects a balance of speed, robustness, and integration flexibility. Optimizing memory resources through ECC, granular access control, and synchronous operations, this SRAM serves as a foundational building block within demanding, clock-sensitive, and reliability-focused system designs. Emphasis on compatibility, configurability, and systems-oriented testing further cements its applicability across rapidly evolving networking and embedded processing landscapes.

Functional Architecture and Operating Principles of CY7C1460KV33-167AXI

The CY7C1460KV33-167AXI leverages a highly optimized pipelined synchronous memory array, integrating No Bus Latency logic to eliminate conventional wait states associated with bus transactions. Fundamentally, synchronous inputs such as address, data, and control signals are sampled exclusively on the rising edge of the system clock. This registration approach enforces a unified timing domain across all access points, streamlining timing closure and reducing the complexity of signal integrity analysis at elevated operating frequencies.

At the transaction level, the architecture enables both single-cycle read/write operations and extended burst modes. The embedded burst counter orchestrates sequential access to four contiguous memory addresses from a single address input, drastically curtailing redundant bus activity. Address bus transitions are minimized, which both lessens power consumption and increases effective data throughput—critical when addressing bandwidth constraints in dense computing nodes or embedded processing units. The burst sequence is configurable as either linear or interleaved via MODE pin assignment, supporting flexible mapping schemes tailored to specific application data flows. Experience indicates that choosing interleaved burst mode can counteract cache-line conflict misses and optimize transfer rates in multi-core shared memory scenarios.

Internal pipeline stages are distributed across input registers, core memory array, and output drivers, ensuring that both data output and tri-state control signals synchronize predictably to the clock boundary. This deterministic handoff is vital when integrating with high-speed FPGAs, ASICs, or microcontrollers, as it allows designers to model setup and hold windows with high fidelity, reducing timing violations during layout or timing verification. In practical deployment, deterministic outputs facilitate easier timing constraint definition and simulation, often resulting in increased board-level reliability and a more streamlined Bring-Up process.

The device’s No Bus Latency logic, acting as a buffer bypass between address decoding and memory array access, is particularly impactful in real-time data acquisition systems or latency-sensitive protocol interfaces. By circumventing traditional bus arbitration delays, the device reacts swiftly to signal assertions, making it suitable for use in systems requiring rapid memory responsiveness, such as network packet buffering or low-latency video frame processing.

One core insight is that, through harmonization of all signal pathways to the system clock—and by abstracting burst counter logic into hardware—the CY7C1460KV33-167AXI shifts much of the timing complexity away from the system integrator and into the device itself. This system-centric design philosophy lessens external dependency on elaborate timing compensation circuitry, freeing up valuable engineering resources for higher-level optimization. Robust pipeline predictability and burst-handling flexibility thus position the CY7C1460KV33-167AXI as a preferred choice for advanced digital designs demanding precise timing, scalable memory bandwidth, and rapid response characteristics, while also simplifying the integration effort at both hardware and firmware levels.

Device Operation Modes and Access Cycles in CY7C1460KV33-167AXI Applications

Device operation in CY7C1460KV33-167AXI-based designs is defined by a set of synchronous access protocols engineered for deterministic, high-speed SRAM interactions with minimal protocol overhead. At the fundamental level, the device orchestrates read and write cycles through direct manipulation of clocked control signals, enabling precise cycle alignment and predictable timing outcomes that are essential for stringent latency requirements.

Single read access is triggered through the synchronous assertion of control lines with write enable held inactive. The address decoder samples the input at the clock edge, propagating the requested data to the output drivers after a fixed two-cycle latency. This pipelined mechanism facilitates reliable system-level timing closure, especially in large crossbar or forwarding architectures where read predictability is critical for arbitration logic. The dual-cycle delay is leveraged in timing models for balanced pipeline stages, making integration into existing clock domains seamless.

Burst read operations exploit the internal burst counter circuitry, initialized with a starting address and configured for up to four consecutive word fetches. By reducing the frequency of address changes across the bus, the burst mode minimizes switching noise and address decode delays—particularly advantageous in high-throughput applications like memory buffers for switching fabric or packet queues. Burst access abstracts away manual address management, lowering implementation complexity in systems requiring coherent streaming of data blocks.

In parallel, the device’s single write cycle synchronizes data acceptance to the clock, tri-stating data drivers automatically during the active write window. This mitigates bus contention risks, supporting multi-initiator architectures typical of multiprocessor control paths. The precise timing of bus relinquish and reacquire simplifies signal integrity assurance, even at elevated clock frequencies, while robust driver management reduces errant data overwrite scenarios without requiring external gating logic.

Burst write operations mirror burst reads, employing the address counter for sequential locations with granular byte-level control. The implementation of four independently routed write enable signals (BW_a–BW_d) permits selective byte modifications within a word. Such partial update capability is integral to database cache engines or networking routing tables where only segments of wide data words are updated, maintaining bandwidth efficiency and obviating full-word read-modify-write overhead. The hardware-enforced high-impedance logic during inactive write enables further safeguards shared bus environments against ghost writes.

The asynchronous ZZ “sleep” mode is accessible with a two-cycle entry/exit timing. Activation places the SRAM array and ancillary logic in a low-power state without sacrificing stored data, enforcing deselection of the chip for system stability. Sleep mode is a strategic feature in platforms implementing idle time between burst activities, such as storage controllers or dynamically provisioned computation engines. The rapid transition timing lends itself to aggressive power gating implementations for energy-aware hardware subsystems.

Overall, the device’s multifaceted access schemes and operational safeguards ensure high scalability across diverse application domains, from network infrastructure and packet switching to embedded control and real-time data caching. The deterministic protocol framework and byte-level write granularity provide design latitude optimizing both throughput and fine-grained resource utilization. The balance of synchronous protocol rigor and selective low-power operation establishes a versatile foundation for contemporary high-performance memory architectures.

Power Management and Reliability: CY7C1460KV33-167AXI Low-Power and ECC Capabilities

The CY7C1460KV33-167AXI exemplifies advanced memory architecture by integrating a highly efficient on-chip Error Correction Code (ECC) engine. This mechanism performs continuous single-bit error detection and correction for every memory word, directly embedded in the device’s datapath. Internally, ECC uses syndrome generation and parity-check logic to detect and localize faults at the bit level, maximizing operational integrity. The architecture ensures that all ECC processes are hardware-based, with sub-nanosecond latency, and fully concealed from user intervention—no modification of existing controller interfaces or timing diagrams is required. This seamless ECC implementation provides a robust shield against soft errors induced by high-energy particles, significantly lowering the Soft Error Rate (SER) to below 0.01 FITs/Mb. Such reliability is critical in mission-centric platforms—routers, industrial controllers, spacecraft equipment—where persistent data accuracy and uptime are essential.

Optimized power management is embedded via a dedicated sleep mode ("ZZ"), activating low-leakage states across the array and support circuitry. The transition into and out of sleep mode is orchestrated internally, maintaining address and data retention without reinitialization costs. This feature is engineered for applications fluctuating between high-activity bursts and extended idle times—telecom switching nodes, sensor gateways, and secured mobile payloads—allowing designers to meet demanding power envelopes without trading off wake-up response. Monitoring practical deployment reveals measurable reductions in system-level quiescent currents, easing board-level thermal constraints and simplifying regulatory compliance with green standards.

A fundamental insight emerges from the synergy between error correction and dynamic power gating. Conventional SRAM often forces trade-offs between reliability and power savings, but integrating autonomous ECC management with intelligent sleep operations resolves this dichotomy. The device functions as a self-contained node: reliably defending against transient errors while actively curbing energy waste. Engineers routinely leverage this for extending field lifetimes and minimizing physical intervention, especially in inaccessible installations. The approach fosters leaner system design, shortening validation cycles and simplifying redundancy architecture, proving advantageous in volume manufacturing and high-assurance environments. As error rates from shrinking geometries outpace industry tolerances, such holistic management secures both operational reliability and optimal power metrics, setting a benchmark for future memory subsystem designs.

Pinout, Packaging, and Signal Interface Details for CY7C1460KV33-167AXI

The CY7C1460KV33-167AXI exemplifies advanced packaging flexibility, offered in both the 100-pin TQFP (14 × 20 mm) and the 165-ball FBGA (for ECC-enabled variants, CY7C1460KVE33). The TQFP package supports efficient board-level rework and visual inspection, beneficial in development environments and in applications prioritizing straightforward prototyping and debugging. The FBGA option, by contrast, delivers optimized electrical performance, lower package inductance, and superior thermal dissipation, aligning with the requirements of space-constrained or high-density backplane designs. Both packaging options adhere to RoHS directives, ensuring lead-free, environmentally responsible assembly compliance for global distribution.

At the pinout level, the CY7C1460KV33-167AXI maintains full compatibility with established synchronous burst SRAM architectures. Address and data lines are arranged to facilitate clean signal routing in multi-layer PCB designs, while the physical grouping of control signals—such as clock enable (CKE), chip enable, byte write enables, output enable, and dedicated “ZZ” sleep control—enables deterministic timing implementation and straightforward support for aggressive power management schemes. JTAG boundary scan integration further streamlines in-circuit testing and enables robust fault diagnostics in production-scale deployments.

The underlying signal interface has been engineered for low-latency, high-frequency data transfers, leveraging industry-standard SSTL I/O levels to guarantee noise margins even at high speeds. Byte-level write control supports fine-grained memory operations critical in communication buffers and network processors. The inclusion of an explicit “ZZ” sleep mode control allows dynamic power gating, a feature increasingly vital in power-sensitive embedded applications.

For design migration, the device’s adherence to conventional synchronous burst SRAM protocols and legacy-compatible pinout mitigates board and firmware modifications. In practice, transitioning to the CY7C1460KV33-167AXI often involves only minor layout validation, assuming existing trace geometries fall within recommended impedance targets. The layout symmetry and logical pin assignment facilitate trace matching and accommodates differential pair routing, further reducing timing skews and enabling clean high-speed signal transitions.

A practical design consideration lies in careful attention to decoupling strategies—placement of low-ESR capacitors near core voltage and I/O supply pins is essential to suppress simultaneous switching noise, especially in the FBGA configuration. Such measures ensure signal integrity in densely populated boards, where crosstalk and ground bounce risk increase with speed and integration density.

Ultimately, the architecture of the CY7C1460KV33-167AXI embodies a balanced compromise between legacy support and modern signal integrity/thermal requirements. Its packaging and signal interface schemes empower seamless integration into both legacy and next-generation systems, providing design agility without sacrificing electrical performance or compliance benchmarks. Demand for this level of compatibility paired with robust signal handling continues to grow, as high-speed memory subsystems become pivotal in network infrastructure, embedded controllers, and communication-intensive compute nodes.

Boundary Scan and Test: JTAG Implementation in CY7C1460KV33-167AXI

Boundary scan through IEEE 1149.1 JTAG protocol is integral to the CY7C1460KV33-167AXI’s validation and diagnostics architecture. At the circuit level, the Test Access Port (TAP) incorporates a state machine controller coordinating the flow of instructions and data through dedicated scan registers. The mechanism relies on standardized JTAG instructions—SAMPLE/PRELOAD for capturing and presetting pin states, EXTEST for driving test patterns externally, BYPASS for optimizing scan chain length, and IDCODE for device identification. These operations are supported natively within the device, ensuring seamless integration into established test frameworks.

Electrical compatibility is designed with flexibility in mind. The JTAG interface accommodates both 3.3 V and 2.5 V signaling domains, aligning with contemporary mixed-voltage board designs. The ability to disable the interface by grounding TCK is a practical provision for legacy installations or environments with security-driven deactivation requirements. This design choice streamlines migration between generations of hardware without introducing compatibility risks.

Within multi-SRAM configurations, boundary scan streamlines interconnect verification and greatly simplifies assembly-level fault isolation. In practice, the architecture reduces reliance on external fixtures and visual inspection, facilitating rapid identification of connection defects and open/short faults at the pin-level. System integrators benefit from real-time state observation and controlled manipulation through the TAP, enabling stepwise board bring-up and robust regression coverage during production. Experience demonstrates substantial reductions in time-to-diagnose intermittent signal issues, which might otherwise be masked by concurrent subsystem activity.

Efficient exploitation of JTAG boundary scan is closely tied to the granularity of instruction set support and the coherence of register mapping. The CY7C1460KV33-167AXI exposes all required standard features, ensuring straightforward integration with automated test and debug chains. Incorporating JTAG consistently as part of the validation strategy across product variants enhances maintainability and simplifies field upgrades, while the high-fidelity interface supports accelerated statistical screening and tracking of device integrity over lifecycle events.

A subtle yet critical benefit arises in system-level debug, where boundary scan allows asynchronous access to signal states independent of normal device operation. This decoupling facilitates root cause analysis in complex error scenarios, especially within densely populated PCBs. Addressing the challenges latent in modern multi-layer substrates, the CY7C1460KV33-167AXI’s boundary scan implementation ensures visibility and control without intrusive probe requirements, underpinning its suitability for mission-critical and high-availability platforms. The overall engineering recommendation is to leverage JTAG as a foundational diagnostic and quality assurance tool, not merely as an auxiliary capability, integrating it into fine-grained test routines and cross-stage validation workflows.

AC/DC Electrical Characteristics and Timing Parameters of CY7C1460KV33-167AXI

AC/DC electrical parameters of the CY7C1460KV33-167AXI define the operational envelope and response predictability critical for memory subsystems in modern high-speed architectures. With a core voltage specification of 3.3 V ±0.3 V and flexible I/O compatibility (2.5 V or 3.3 V levels), the device supports broad integration, minimizing cross-domain signal integrity challenges and allowing straightforward interfacing in mixed-voltage environments. The adaptive voltage margin enhances tolerance against supply variation, which is essential for reliable deployment in systems with stringent power management requirements.

Timing parameters underscore reliability under demanding workloads. The specified speed grade of 167 MHz—backed by a 6 ns cycle time and a clock-to-output delay of 3.4 ns—enables deterministic access profiles, which are crucial for synchronous applications requiring bounded latency. Reference voltages for timing—1.5 V for 3.3 V I/O and 1.25 V for 2.5 V I/O—streamline interface timing closure. This reduces metrological errors in timing analysis and simplifies timing signoff, particularly in multi-voltage bus architectures where skew and margin allocation are crucial for signal consistency.

Key AC characteristics, such as output impedance and data bus capacitance, conform to established industry standards, ensuring interoperability with contemporary PCB design rules. AC test load definitions guarantee that the reported timing values reflect realistic system conditions rather than idealized laboratory scenarios. This alignment with actual board-level environments reduces the likelihood of timing violations, especially in high fan-out layouts or when routing through dense topologies.

The synchronous registered interface supports reliable setup and hold margins, an asset in large, high-speed memory arrays or deep pipeline structures. The registered design internalizes variability and facilitates consistent timing alignment even as data rates scale or fanout increases. This feature is leveraged in applications demanding deterministic throughput, such as data acquisition modules or low-latency caching subsystems.

In practice, minimizing propagation delay and controlling impedance discontinuities—using controlled trace geometries and grounded guard structures—enhances signal fidelity within the margins set by the device. Matching the AC/DC characteristics with board stack-up and termination schemes mitigates reflection and crosstalk. Board-level validation confirms that the precise timing references enable tighter timing closure, reducing the need for extensive timing slack or margining during prototyping.

It is advantageous to exploit the device’s voltage agnosticism when coexisting with advanced bus protocols or FPGAs configured at varying voltage levels. Selecting bus termination and connector families aligned with the device's output impedance optimizes throughput and noise immunity. The nuanced specification of timing references, in concert with practical board constraints, fosters predictable system behavior—especially with complex topology and multilayer routing inherent in cutting-edge high-speed memory interfaces.

The clear distinction between AC and DC characteristics in the documentation provides a valuable foundation for simulation and timing extraction. Early-stage signal integrity simulations reveal that, when the CY7C1460KV33-167AXI is incorporated at the center of high-performance data paths, rapid timing closure and robust margin confirmation become routine, supporting aggressive board density and advanced packaging requirements. As observed across multiple integration scenarios, the device’s tight timing and electrical characteristics directly contribute to rapid design iteration and high post-silicon yield.

Thermal and Environmental Ratings of CY7C1460KV33-167AXI

The CY7C1460KV33-167AXI is engineered to meet stringent environmental and thermal requirements, enabling reliable integration into both industrial and commercial electronic systems. The 'I' grade variant supports operational temperatures from –40 °C to +85 °C, addressing mission-critical scenarios where thermal margin must be preserved under fluctuating ambient and self-heating conditions. For commercial settings, the device reliably functions within the 0 °C to +70 °C window, aligning with standard office or data center deployments. These ratings emphasize not only silicon integrity but also long-term parametric stability for memory-intensive tasks.

Underlying these temperature ranges is precise management of thermal resistance within the package design. Low junction-to-case and junction-to-ambient values are achieved through optimized PCB pad layouts and controlled leadframes, ensuring consistent heat dissipation during peak load. During reflow soldering, the package tolerates high-process excursions without impact on internal wire bonds or encapsulant integrity. This robustness extends to in-circuit test environments where devices are exposed to repeated thermal cycling—a frequent occurrence in automated manufacturing lines—without degradation in functional margin.

Electrostatic discharge (ESD) protection exceeds 2000 V per MIL-STD-883 standards, implemented through integrated protection structures at all interface points. This feature dramatically reduces field failure rates during board assembly and repair, especially where manual handling introduces unpredictable ESD risk. Latch-up immunity surpassing 200 mA is engineered via advanced isolation strategies in the silicon, mitigating risk from supply and signal transients commonly induced in noisy industrial power grids. Such resilience is evident in practical deployments where exposure to voltage spikes or unanticipated ground shifts can occur during system start-up or maintenance interventions.

Compliance with lead-free RoHS directives is incorporated at both the material and process stages, utilizing certified alloys and finishes compatible with current automated assembly standards. This ensures seamless adoption into global supply chains and eliminates common concerns regarding solder wettability and mechanical reliability post-assembly. In extensive board-level qualification runs, the device consistently demonstrates stable operation after accelerated thermal and humidity aging cycles, supporting reliability predictions for service lifetimes well beyond baseline requirements.

A nuanced aspect of the device’s environmental fitness lies in its balance between high integration and ruggedized I/O interfaces. The attention to cumulative stress factors—not only during electrical operation but across repeated handling and test events—demonstrates a forward-thinking approach to both product engineering and manufacturing logistics. In practice, deploying the CY7C1460KV33-167AXI results in minimal yield loss over extended runs, streamlining production planning and enabling confidence in system-level thermal design margins. The integration of comprehensive protection mechanisms solidifies the device’s suitability for deployment in harsh industrial, automation, and networking contexts, where reliability is prioritized alongside performance.

Potential Equivalent/Replacement Models for CY7C1460KV33-167AXI

Pin-compatible and functionally equivalent synchronous SRAM alternatives to the CY7C1460KV33-167AXI are critical in scenarios where supply assurance, BOM optimization, or enhanced fault tolerance are prioritized. The CY7C1460KVE33-167AXI serves as a direct replacement, augmenting the baseline device with integrated error correction code (ECC) logic. This variant maintains the identical 1M × 36 organization, package footprint, and speed grade, leveraging ECC for silent correction of single-bit faults—a feature that delivers improved system reliability in mission-critical and high-noise environments without necessitating rewrites of firmware or hardware schematics. Migrating to the KVE33 variant typically requires only a validation cycle to confirm compatibility in the intended use case, especially in designs where latent soft errors may impact system integrity over time.

Furthermore, the CY7C1462KVE33-167AXI introduces a differentiated array structure (2M × 18 with ECC), preserving comparable bandwidth, access time, and synchronous pipelining as the 1M × 36 base model while accommodating systems where either narrower or wider data bus adaptation is desired. Selection between 1M × 36 and 2M × 18 configurations is often driven by controller requirements or board-level trace optimization, and these devices’ compatible pinouts streamline the replacement process. Practical deployments have demonstrated minimal requalification effort when swapping between these models, provided the system controller logic can accommodate the revised data bus mapping and the firmware is configured for the new organization.

From a multi-sourcing and risk mitigation perspective, industry-standard ZBT and No Bus Latency (NoBL) pipelined SRAMs—conforming to the 36-Mbit, 1M × 36 configuration and meeting similar timing and package constraints—may also serve effectively as drop-in replacements. These alternatives typically align with JEDEC packaging and timing, supporting seamless inventory interchangeability. Successful industry practice emphasizes rigorous timing margin analysis and at-speed functional validation under worst-case conditions to guarantee full interface and bandwidth compatibility, as subtle differences in input setup, hold time, or output drive could otherwise propagate intermittent system faults.

Designers benefit from structuring component selection workflows that incorporate pre-approved alternate part numbers, reducing procurement disruption and enabling agility for mid-life requalification as supply conditions change. A continuous improvement approach entails not only validating electrical and functional compatibility but also subjecting candidate alternatives to accelerated life testing in representative application environments—especially where ECC enhancements, I/O drive characteristics, or power-up sequencing may introduce latent system-level behavior deviations.

Across infrastructure, telecom, and industrial automation deployments, systematic integration of compatible SRAM alternatives such as the KVE33 and KVE33-2M18 families ensures design resilience and offers an incremental path toward higher reliability with minimal engineering friction, reinforcing robust platform lifecycle management.

Conclusion

The CY7C1460KV33-167AXI Synchronous SRAM from Infineon Technologies exemplifies a memory solution engineered for scenarios demanding both high bandwidth and deterministic latency. At its core, this device leverages synchronous burst access protocols, enabling sustained data throughput that matches the rising demands of high-frequency pipelines found in modern data paths. The implementation of hardware-based Error Correcting Code (ECC) introduces a critical layer of data integrity, automatically detecting and correcting common bit errors in real time with zero impact on interface timing. Such mechanisms substantially reduce the risk profile in mission-critical applications, especially where silent data corruption cannot be tolerated.

Integrating this SRAM into industry-standard platforms is streamlined by its support for common voltage levels, bus protocols, and form factors. The design enables direct migration with minimal redesign, aided by extensive collateral and compatible register configurations. The utilization of robust manufacturing processes and stringent quality screens ensures consistent device behavior across varying operational environments, aligning with long-lifecycle requirements typical in networking, telecommunications, and industrial automation infrastructures.

From an application perspective, the CY7C1460KV33-167AXI excels in environments where low-latency random access is essential for maintaining overall system performance. Common deployments include high-speed lookup tables in routers, packet buffers in switches, and deterministic-state storage in programmable logic controllers. Hardware ECC not only safeguards against data corruption but also enhances system-level testability, allowing for real-time verification without the need for extensive firmware intervention or system downtime.

When integrating this device, careful attention should be given to board-level signal integrity and clock distribution. Synchronous interfaces of this class inherently demand tightly controlled timing margins, necessitating meticulous PCB layout and simulation during system design. In environments prone to electrical noise or infrequent power cycling, device stability and soft error resilience have proven dependable, aligning with the stringent requirements of safety-critical or 24/7 operational contexts.

Notably, the CY7C1460KV33 series features multiple compatible density and speed grades, offering designers flexibility when scaling solution architecture or balancing power-performance constraints. This modularity within a field-proven architecture eliminates ecosystem fragmentation and shortens development cycles—a principle that remains instrumental as electronic systems evolve toward higher complexity. As architectures increasingly offload complexity to memory subsystems, such well-engineered synchronous SRAMs not only fulfill functional criteria but also drive architectural confidence, ensuring both current and future system designs remain robust and adaptable.

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1. Product Overview: CY7C1460KV33-167AXI Synchronous SRAM2. Key Features of the CY7C1460KV33-167AXI Series3. Functional Architecture and Operating Principles of CY7C1460KV33-167AXI4. Device Operation Modes and Access Cycles in CY7C1460KV33-167AXI Applications5. Power Management and Reliability: CY7C1460KV33-167AXI Low-Power and ECC Capabilities6. Pinout, Packaging, and Signal Interface Details for CY7C1460KV33-167AXI7. Boundary Scan and Test: JTAG Implementation in CY7C1460KV33-167AXI8. AC/DC Electrical Characteristics and Timing Parameters of CY7C1460KV33-167AXI9. Thermal and Environmental Ratings of CY7C1460KV33-167AXI10. Potential Equivalent/Replacement Models for CY7C1460KV33-167AXI11. Conclusion

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Quality Assurance (QC)

DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.

Quality Assurance
Counterfeit and defect prevention

Counterfeit and defect prevention

Comprehensive screening to identify counterfeit, refurbished, or defective components, ensuring only authentic and compliant parts are delivered.

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Visual and packaging inspection

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Verification of component appearance, markings, date codes, packaging integrity, and label consistency to ensure traceability and conformity.

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