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US2M
Diotec Semiconductor
DIODE UFR SMB 1000V 2A
29155 Pcs New Original In Stock
Diode 1000 V 2A Surface Mount DO-214AA (SMB)
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5.0 / 5.0
- (43 Ratings)
US2M
Product Overview
12943613
DiGi Electronics Part Number
US2M-DGManufacturer
Diotec Semiconductor
US2M
Description
DIODE UFR SMB 1000V 2AInventory
29155 Pcs New Original In Stock
Diode 1000 V 2A Surface Mount DO-214AA (SMB)
Quantity
Minimum 1
Minimum 1
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US2M Technical Specifications
Category
Diodes, Rectifiers, Single Diodes
Packaging
Cut Tape (CT) & Digi-Reel®
Series
-
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1000 V
Current - Average Rectified (Io)
2A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 2 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75 ns
Current - Reverse Leakage @ Vr
5 µA @ 1000 V
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Supplier Device Package
DO-214AA (SMB)
Operating Temperature - Junction
-50°C ~ 150°C
Datasheet & Documents
Datasheets
Download US2M Product Specification (PDF)
HTML Datasheet
US2M-DG
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.10.0080
Additional Information
Other Names
4878-US2MDKR
4878-US2MTR
2796-US2MTR-DG
4878-US2MCT
2796-US2MTR
Standard Package
3,000
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
грудня 02, 2025
DiGi Electronics propose un support après-vente fiable et amical qui facilite notre travail quotidien.
грудня 02, 2025
The company's commitment to customer satisfaction is truly commendable.
грудня 02, 2025
The after-sales assistance I received was professional and prompt.
грудня 02, 2025
Their focus on quality and shipping speed greatly benefits our operations.
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Frequently Asked Questions (FAQ)
Can the US2M diode be safely used as a drop-in replacement for the HS3MB R5G in a 1 kV, 1.8 A flyback converter, and what are the key reliability risks to evaluate?
While the US2M (1000 V, 2 A, 75 ns trr) and HS3MB R5G (1000 V, 3 A, 50 ns trr) share similar voltage ratings and package types (SMB/DO-214AA), direct replacement requires careful evaluation. The US2M has a lower average current rating (2 A vs. 3 A), which may lead to thermal stress or premature failure if the application consistently draws near 1.8 A with high ambient temperatures or poor PCB thermal design. Additionally, the US2M’s higher forward voltage (1.7 V @ 2 A vs. ~1.5 V for HS3MB) increases conduction losses and junction temperature. To mitigate risk, verify actual RMS and peak currents, ensure adequate copper pour for heat dissipation, and consider derating the US2M to ≤1.5 A continuous. Thermal imaging under worst-case load is recommended before full deployment.
What design constraints should I consider when using the US2M in a high-frequency rectification circuit operating above 50 kHz, given its 75 ns reverse recovery time?
Although the US2M is classified as a fast recovery diode (trr = 75 ns), its performance at frequencies above 50 kHz introduces switching losses and potential EMI concerns. At 100 kHz, for example, the reverse recovery period consumes ~0.75% of the switching cycle, contributing to elevated power dissipation and heat generation—especially under inductive loads. This can reduce efficiency and compromise long-term reliability if thermal management is inadequate. To minimize risk, ensure the PCB layout minimizes loop inductance, use a gate drive snubber if driving a synchronous rectifier upstream, and validate thermal performance with infrared thermography. For applications consistently above 75 kHz, consider ultra-fast alternatives like the ES2J or UF4007, despite their lower voltage ratings, or evaluate SiC diodes for superior high-frequency behavior.
Is the US2M suitable for use in a 1 kV PFC boost stage where reverse voltage overshoots up to 1.2 kV are possible during transient events?
No, the US2M is not recommended for PFC boost stages prone to voltage overshoots exceeding 1 kV. With a maximum DC reverse voltage (Vr) of 1000 V, even brief transients reaching 1.2 kV risk avalanche breakdown, especially at elevated junction temperatures where breakdown voltage decreases. Repeated exposure can cause cumulative damage or catastrophic failure. Instead, select a diode with a higher Vr margin—such as the 1200 V-rated MUR120 or STTH2R12—or implement active clamp or TVS-based overvoltage protection. If the US2M must be used, conduct rigorous transient testing with an oscilloscope to confirm peak inverse voltage (PIV) never exceeds 900 V under all operating and fault conditions, including line surges and load dumps.
How does the US2M’s forward voltage drop of 1.7 V at 2 A impact thermal design in a compact, enclosed power supply with limited airflow?
The US2M’s 1.7 V forward drop results in 3.4 W of power dissipation at 2 A, which can significantly elevate junction temperature in thermally constrained environments. In an enclosed supply with minimal airflow, this may push the junction beyond the 150°C limit unless robust thermal pathways are designed. To mitigate risk, use a large thermal pad connected to internal ground planes or an external heatsink tab (if available), and avoid placing heat-sensitive components nearby. Perform thermal modeling or empirical testing to ensure Tj remains below 125°C under worst-case ambient (e.g., 70°C enclosure). Consider derating the current to 1.5 A or selecting a lower-Vf alternative like the VS-2FL10S-M3 (1.35 V @ 2 A) if efficiency and thermal headroom are critical.
Can the US2M be used in parallel with another SMB-packaged diode to increase current handling, and what matching criteria are essential to avoid current imbalance?
Paralleling the US2M with another SMB diode (e.g., another US2M or compatible type) is possible but introduces significant risk due to inherent Vf mismatch and thermal runaway potential. Even small differences in forward voltage (e.g., ±50 mV) can cause one diode to carry disproportionately more current, leading to localized heating and further Vf reduction—a positive feedback loop. To safely parallel US2M diodes, select units from the same manufacturing batch, mount them on a shared copper island for thermal coupling, and consider adding small series resistors (0.1–0.5 Ω, 1 W) to balance current. However, for reliability-critical designs, it’s strongly advised to use a single higher-current diode (e.g., 3 A-rated RF3VBM4S) instead of paralleling US2M devices.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
US2M CAD Models
Diotec Semiconductor US2M PCB symbols & footprints
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