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BZT52C3V3
Diotec Semiconductor
DIODE ZENER 3.3V 500MW SOD123F
305368 Pcs New Original In Stock
Zener Diode 3.3 V 500 mW ±5% Surface Mount SOD-123F
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5.0 / 5.0
- (368 Ratings)
BZT52C3V3
Product Overview
12944782
DiGi Electronics Part Number
BZT52C3V3-DGManufacturer
Diotec Semiconductor
BZT52C3V3
Description
DIODE ZENER 3.3V 500MW SOD123FInventory
305368 Pcs New Original In Stock
Zener Diode 3.3 V 500 mW ±5% Surface Mount SOD-123F
Quantity
Minimum 1
Minimum 1
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BZT52C3V3 Technical Specifications
Category
Diodes, Zener, Single Zener Diodes
Packaging
Cut Tape (CT) & Digi-Reel®
Series
-
Product Status
Active
Voltage - Zener (Nom) (Vz)
3.3 V
Tolerance
±5%
Power - Max
500 mW
Impedance (Max) (Zzt)
130 Ohms
Current - Reverse Leakage @ Vr
20 µA @ 1 V
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOD-123F
Supplier Device Package
SOD-123F
Datasheet & Documents
HTML Datasheet
BZT52C3V3-DG
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.10.0050
Additional Information
Other Names
2796-BZT52C3V3TR-DG
2796-BZT52C3V3TR
4878-BZT52C3V3DKR
4878-BZT52C3V3CT
4878-BZT52C3V3TR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
грудня 02, 2025
每次與他們合作都感覺非常專業，產品質量優良，售後也很周到！
грудня 02, 2025
Excellent support, competitive pricing, and a seamless shopping experience.
грудня 02, 2025
The logistics process is transparent and well-managed, ensuring timely deliveries.
грудня 02, 2025
I appreciate how their packaging reflects professionalism and care for the customer.
грудня 02, 2025
Reliability in product performance is a hallmark of DiGi Electronics, making them my preferred supplier.
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Frequently Asked Questions (FAQ)
Can BZT52C3V3 be used as a direct replacement for 1N4728A in a surface-mount design, and what are the key thermal and footprint considerations?
The BZT52C3V3 can serve as a functional equivalent to the 1N4728A for a 3.3V Zener application, but it is not a footprint-compatible drop-in replacement due to the BZT52C3V3’s SOD-123F surface-mount package versus the 1N4728A’s through-hole DO-41 package. In a PCB redesign, ensure thermal performance is maintained—while both support 500mW power dissipation, the BZT52C3V3 relies on PCB copper for heatsinking in SMT layouts. To mitigate thermal risk, use minimum 2-layer boards with adequate copper pour and avoid enclosed environments near 150°C junction temperatures. Confirm leakage and impedance specs meet your regulator or clamp circuit tolerance requirements.
How stable is the BZT52C3V3’s 3.3V Zener voltage under dynamic load conditions in a low-power voltage reference circuit?
The BZT52C3V3 provides ±5% initial tolerance and a maximum impedance (Zzt) of 130 Ohms, which can introduce voltage variation under fluctuating loads. In low-power reference applications, operate the BZT52C3V3 near its specified test current (typically 5mA) to minimize dynamic impedance effects. For improved stability, pair it with a series buffer (e.g., low-Iq op-amp) or use a precision shunt reference like the TLVH431 instead if tighter regulation (<1%) is required. Avoid using BZT52C3V3 in open-loop analog circuits where temperature drift or load sensitivity could impact signal integrity.
What are the reliability risks when operating BZT52C3V3 at elevated temperatures near 125°C ambient in an automotive environment?
The BZT52C3V3 has a maximum junction temperature of 150°C, making it feasible for automotive underhood use, but thermal design is critical. At 125°C ambient, power derating must be applied—exceeding 250mW can cause thermal runaway due to increased leakage current. Ensure the PCB includes thermal vias and ground planes to improve dissipation. Monitor long-term reliability: sustained high temperature accelerates parametric drift, especially in reverse leakage (up to 20 µA at 1V). For safety-critical designs, consider burn-in testing or redundant overvoltage protection alongside BZT52C3V3.
How does BZT52C3V3 compare to SMAZ3V3 in terms of leakage current and clamping performance for ESD protection?
When comparing BZT52C3V3 vs SMAZ3V3 for ESD clamping, both are 3.3V SOD-123F devices, but the BZT52C3V3 has a specified reverse leakage of 20 µA @ 1V, which is typical—SMAZ3V3 often exhibits slightly lower leakage (~10 µA). However, for short-duration ESD events (e.g., IEC 61000-4-2), leakage is less critical than dynamic clamping voltage. The BZT52C3V3’s 130 Ohm Zzt may result in higher transient voltage spikes under fast pulses compared to low-impedance TVS diodes. For robust ESD protection, prefer a dedicated TVS like SMAJ3V3; use BZT52C3V3 only for moderate overvoltage clamping or reference roles where cost and availability are key.
What PCB layout practices minimize thermal stress and ensure long-term reliability when using BZT52C3V3 in power dissipation-critical applications?
To maximize reliability of BZT52C3V3 in power-intensive scenarios, follow these layout practices: use at least 40 mm² of copper pour connected to each pad via thermal vias, limit power dissipation to 350mW or less without forced cooling, and isolate the device from adjacent heat sources. Avoid placing BZT52C3V3 near high-speed switching nodes to prevent coupling noise through its junction capacitance. For voltage reference use, bypass its output with a 100nF ceramic capacitor. These steps reduce thermal stress, maintain Zener stability, and prevent premature aging due to junction overheating, especially in enclosed or high-ambient environments.
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DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
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